Distributed and parallel direct simulation Monte Carlo of rarefied gas flows

1998 ◽  
pp. 893-895
Author(s):  
Alexander V. Bogdanov ◽  
Nickolay Y. Bykov ◽  
German A. Lukianov
Keyword(s):  
Monte Carlo ◽  
Rarefied Gas ◽  
Direct Simulation Monte Carlo ◽  
Gas Flows ◽  
Direct Simulation ◽  
Rarefied Gas Flows ◽  
Simulation Monte Carlo

Direct Simulation Monte Carlo Analysis of Rarefied Gas Flow Structures and Ventilation of Etching Gas in Magneto-Microwave Plasma Etching Reactors

2002 ◽  
Vol 124 (2) ◽  
pp. 476-482 ◽  
Author(s):  
Masato Ikegawa ◽  
Yoshihumi Ogawa ◽  
Ryoji Fukuyama ◽  
Tatehito Usui ◽  
Jun’ichi Tanaka
Keyword(s):  
Plasma Etching ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Rarefied Gas ◽  
Direct Simulation Monte Carlo ◽  
Gas Flows ◽  
Direct Simulation ◽  
Rarefied Gas Flows ◽  
Simulation Monte Carlo ◽  
Gas Supply

Gas flows in plasma etching reactors for semiconductor fabrication became a chief consideration in designing second-generation reactors with higher etching rates. An axisymmetrical model based on the direct simulation Monte Carlo method has been developed for analyzing rarefied gas flows in a vacuum chamber with the conditions of downstream pressure and gas flow rate. By using this simulator, rarefied gas flows with radicals and etch-products were calculated for microwave-plasma etching reactors. The results showed that the flow patterns in the plasma chamber strongly depend on the Knudsen number and the gas-supply structure. The ventilation of the etch-products in the plasma chamber was found to be improved both for higher Knudsen numbers and for gas-supply structures of the downward-flow type, as compared with those of the radial-flow or upward-flow types.

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