Cleavage steps and the cleavage plane in chemically embrittled Cu3Au single crystals

JOM ◽  
1957 ◽  
Vol 9 (4) ◽  
pp. 494-495 ◽  
Author(s):  
Robert Bakish
Keyword(s):  
Single Crystals ◽  
Cleavage Plane

Microhardness anisotropy on the (010) cleavage plane of single crystals of Bi2S3 and Sb2S3

1992 ◽  
Vol 27 (5) ◽  
pp. 1357-1360 ◽  
Author(s):  
Hong Li ◽  
M. Jensen ◽  
R. C. Bradt
Keyword(s):  
Single Crystals ◽  
Cleavage Plane

Fracture of B2 Aluminide Single Crystals

1990 ◽  
Vol 213 ◽  
Author(s):  
Kehi-Minn Chang ◽  
R. Darolia ◽  
H.A. Lipsitt
Keyword(s):  
Crystal Lattice ◽  
Single Crystals ◽  
Uniaxial Tension ◽  
Crack Growth ◽  
Cleavage Fracture ◽  
Fracture Behavior ◽  
Cleavage Plane ◽  
Model Based ◽  
Bend Tests ◽  
Crystalline Plane

ABSTRACTSingle crystals of B2 aluminides, including FeAl, NiAl, and CoAl, were tested to investigate their fracture behavior. Specimens were aligned along specific orientations of the crystal lattice. Both uniaxial tension and notched bend tests revealed a cleavage fracture in all crystals. The cleavage occurred along a specific crystalline plane: {100} for FeAl; {110} for NiAl and CoAl. A model based on the ordering energy of unlike atoms is proposed to explain the preferred cleavage plane in these B2 structures. Fracture on transient planes around {115} are observed in NiAl before the crack growth continues on a cleavage plane.

MBE growth and HR-TEM observations of several-nm MgO film on the cleavage plane of Bi2Sr2CaCu2Ox single crystals

1991 ◽  
Vol 185-189 ◽  
pp. 2549-2550 ◽  
Author(s):  
Koji Yamano ◽  
Kazuhiro Shimaoka ◽  
Kazuhiko Takahashi ◽  
Tatsuro Usuki ◽  
Yorinobu Yoshisato ◽  
...  
Keyword(s):  
Single Crystals ◽  
Cleavage Plane ◽  
Mbe Growth

Ultrahigh piezoelectric response perpendicular to special cleavage plane in BaTiO3 single crystals

2005 ◽  
Vol 86 (1) ◽  
pp. 012905 ◽  
Author(s):  
R. Chu ◽  
Z. Xu ◽  
G. Li ◽  
H. Zeng ◽  
H. Yu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Cleavage Plane ◽  
Piezoelectric Response

The Influence of Crystallographic Orientation of the Crack Plane and Crack Front on the Fracture of Tungsten Single Crystals

1994 ◽  
Vol 367 ◽  
Author(s):  
V. Glebovsky ◽  
H. Fishmeister ◽  
J. Riedle ◽  
V. Semenov ◽  
P. Gumbsch
Keyword(s):  
Surface Energy ◽  
Crack Propagation ◽  
Single Crystals ◽  
Crack Front ◽  
Crystallographic Orientation ◽  
Cleavage Plane ◽  
Crack Plane ◽  
Experimental Procedure ◽  
Resist Crack Propagation

AbstractFor fracture studies on oriented W monocrystalline specimens it is necessary to produce very sharp, stopped precracks, which presents difficulties in the case of W. The experimental procedure and technique to produce precracks is described. The fracture experiments gave strong indications for a preference of the {100} plane as cleavage plane. It was found that the {110} planes successfully resist crack propagation, although they are the planes with the lowest surface energy. The appearance of the {121} plane as a cleavage plane in our experiments makes further studies with oriented W monocrystalline samples necessary.

Photoleitung in 2,3-Dimethylnaphthalin bei gepulster Lichteinstrahlung / Transient Photocurrents in 2,3-Dimethylnaphthalene Single Crystals

1976 ◽  
Vol 31 (3-4) ◽  
pp. 251-258
Author(s):  
W.-W. Falter
Keyword(s):  
Electric Field ◽  
Single Crystals ◽  
Pulse Shape ◽  
Applied Field ◽  
Room Temperature ◽  
Cleavage Plane ◽  
Trap Depth ◽  
Surface Region ◽  
Deep Hole ◽  
Hole Trapping

Hole currents are observed by illuminating 2,3 DN single crystals with 347 nm and 337 nm. The probability of generating free holes is a function of temperature and electric field-strength. In the cleavage plane of the crystals the mobility does not depend on the direction of the applied field and amounts to 2.6·10-1 cm2/Vsec at room temperature, which exceeds the related value measured perpendicularly to the plane by a factor of four. The temperature-dependence of the mobility indicates shallow hole-trapping exspecially close to the surface. The trap depth is estimated to be 10-2 eV. Temperature also influences the pulse shape, by which one can conclude that hole traps of 0.2 eV and ≲ 0.1 eV exist in a thin surface layer. Photocurrents exited with 347 nm increase stronger than quadratically with the electric field. Deep hole traps, being also restricted to the surface region of the crystals, are made responsible for this fact.

Cleavage Fracture and Dislocation Structures of Ductile L12 Type Ni3Ge Single Crystals

1990 ◽  
Vol 213 ◽  
Author(s):  
H.R.P. Inoue ◽  
C.M. Wayman ◽  
T. Saburi
Keyword(s):  
Electron Microscopy ◽  
Single Crystals ◽  
Cleavage Fracture ◽  
Room Temperature ◽  
Cleavage Plane ◽  
Stacking Faults ◽  
Octahedral Plane ◽  
Slip Bands ◽  
Persistent Slip Bands ◽  
Crack Tips

ABSTRACTFracture and dislocation structures of single crystals of the L12-type compound Ni3Ge deformed in tension-compression at room temperature are investigated by optical and electron microscopy. After considerable plastic deformation, cracks nucleate along primary (111) planes of [245]-oriented single crystals and grow in zigzag manner by connecting one octahedral plane to another. Fracture occurs by brittle cleavage. Similar cleavage fracture also occurs when thin films (whose plane is (111)) prepared from cyclically deformed specimens are further deformed at room temperature. These observations are different from those reported in a previous study where the cleavage plane is claimed to be {001} for single crystals deformed in tensio at room temperature. A number of piled-up dislocations are emitted due to stress concentration at and ahead of crack tips, evidencing that this compound is intrinsically ductile. Superlattice intrinsic stacking faults are observed in front of crack tips along with a moire structure. Although there is argument that such moire structures are formed in persistent slip bands during cyclic deformation of Ni3Al, this is unlikely in the present case. The moire structure observed is believed to be formed by deformation of the thin (111) film.

Etching characteristics of screw and edge dislocations on the cleavage plane of BiSb single crystals

1984 ◽  
Vol 21 (4) ◽  
pp. 379-381
Author(s):  
R.C. Shah ◽  
C.F. Desai ◽  
G.R. Pandya ◽  
V.P. Bhatt
Keyword(s):  
Single Crystals ◽  
Cleavage Plane ◽  
Edge Dislocations

scholarly journals Ultrahigh piezoelectric response along some special cleavage plane in BaTiO3 single-crystals

2005 ◽  
Vol 54 (2) ◽  
pp. 935
Author(s):  
Chu Rui-Qing ◽  
Xu Zhi-Jun ◽  
Li Guo-Rong ◽  
Zeng Hua-Rong ◽  
Yu Han-Feng ◽  
...  
Keyword(s):  
Single Crystals ◽  
Cleavage Plane ◽  
Piezoelectric Response

The Microstructure of Shock-Synthesized Diamond

1967 ◽  
Vol 25 ◽  
pp. 324-325
Author(s):  
Lucien F. Trueb
Keyword(s):  
Single Crystals ◽  
Preferred Orientation ◽  
High Magnification ◽  
Texture Pattern ◽  
Shock Process ◽  
New Type ◽  
Diffraction Diagram

A new type of synthetic industrial diamond formed by an explosive shock process has been recently developed by the Du Pont Company. This material consists of a mixture of two basically different forms, as shown in Figure 1: relatively flat and compact aggregates of acicular crystallites, and single crystals in the form of irregular polyhedra with straight edges.Figure 2 is a high magnification micrograph typical for the fibrous aggregates; it shows that they are composed of bundles of crystallites 0.05-0.3 μ long and 0.02 μ. wide. The selected area diffraction diagram (insert in Figure 2) consists of a weak polycrystalline ring pattern and a strong texture pattern with arc reflections. The latter results from crystals having preferred orientation, which shows that in a given particle most fibrils have a similar orientation.

Sign in / Sign up

Export Citation Format

Share Document