scholarly journals Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied

2010 ◽  
Vol 2 (2) ◽  
pp. 126-133 ◽  
Author(s):  
Md. Abdul Wahab ◽  
Khairul Alam
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Performance Comparison ◽  
Carbon Nanotube Transistors ◽  
Nanotube Transistors

Photo- and Thermal Annealing-Induced Processes in Carbon Nanotube Transistors

2003 ◽  
Vol 789 ◽  
Author(s):  
Moonsub Shim ◽  
Giles P. Siddons ◽  
Jae Kyeong Jeong ◽  
David Merchin
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Thermal Annealing ◽  
Native Oxide ◽  
Channel Conductance ◽  
Air Exposure ◽  
Carbon Nanotube Transistors ◽  
Low Intensity ◽  
Function Change ◽  
Nanotube Transistors

ABSTRACTPhotoinduced conductivity changes and effects of thermal annealing in carbon nanotube transistors have been examined. Low-intensity ultraviolet light significantly reduces the p-channel conductance while simultaneously increasing the n-channel conductance. A combination of optical absorption and electron transport measurements reveals that these changes occur without variations in dopant concentrations. Measurements with different metals reveal that UV induces oxygen desorption from the electrodes rather than from nanotubes. In Ti-nanotube contact where the Schottky barrier plays an important role, photodesorption of oxygen mainly occurs from the native oxide of Ti electrodes. Decrease in the p-channel conductance arises from the metal work function change which causes larger hole Schottky barrier. Non-Schottky Pd-contacted nanotube transistors do not show photodesorption effects with low intensity UV. Thermal annealing of nanotube transistors with Ti/Au electrodes also leads to the disappearance of the photodesorption effects. However, a noticeable p-doping is observed to upon air exposure after thermal annealing.

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