Generalized phase-shifting algorithm for dynamic phase measurement in electron-wave interferometry

1994 ◽  
Vol 1 (2) ◽  
pp. 278-280
Author(s):  
Guanming Lai ◽  
Qingxin Ru ◽  
Kazuhiro Aoyama ◽  
Akira Tonomura
2016 ◽  
Vol 24 (13) ◽  
pp. 13744 ◽  
Author(s):  
Linbo Huang ◽  
Xiaoxu Lu ◽  
Jiaosheng Li ◽  
Yunfei Zhou ◽  
Jiaxiang Xiong ◽  
...  

2018 ◽  
Vol 10 (2) ◽  
pp. 1-11 ◽  
Author(s):  
Bingbo Li ◽  
Liyun Zhong ◽  
Jiaosheng Li ◽  
Shengde Liu ◽  
Jindong Tian ◽  
...  

Microscopy ◽  
2020 ◽  
Author(s):  
Kazuo Yamamoto ◽  
Satoshi Anada ◽  
Takeshi Sato ◽  
Noriyuki Yoshimoto ◽  
Tsukasa Hirayama

Abstract Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths, and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas (2DEG) layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence (OEL) multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.


Author(s):  
Y. H. Huang ◽  
S. Y. Hung ◽  
Y. S. Chen ◽  
L. Liu ◽  
S. P. Ng

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