Energy requirements for the pressure oxidation of gold-bearing sulfides

JOM ◽  
1990 ◽  
Vol 42 (9) ◽  
pp. 15-18 ◽  
Author(s):  
P. G. Mason
Keyword(s):  
Energy Requirements ◽  
Pressure Oxidation ◽  
Gold Bearing

Pressure oxidation of double refractory gold bearing sulphide Concentrates

2019 ◽  
pp. 55-66
Author(s):  
Ya. M. Shneerson ◽  
◽  
L. V. Chugaev ◽  
Keyword(s):  
Pressure Oxidation ◽  
Refractory Gold ◽  
Gold Bearing

scholarly journals Pressure oxidation of refractory gold-bearing concentrates using halogen-containing solvents and adsorbent

2015 ◽  
pp. 29-33
Author(s):  
A. V. Boldyrev ◽  
◽  
S. V. Balikov ◽  
A. V. Bogorodskiy ◽  
Yu. E. Emelyanov ◽  
...  
Keyword(s):  
Pressure Oxidation ◽  
Refractory Gold ◽  
Gold Bearing

scholarly journals Oxidation of pyrite: Consequences and significance

2002 ◽  
Vol 56 (7-8) ◽  
pp. 299-316 ◽  
Author(s):  
Mile Dimitrijevic ◽  
Milan Antonijevic ◽  
Valentina Dimitrijevic
Keyword(s):  
Pyrite Oxidation ◽  
Bacterial Oxidation ◽  
Pressure Oxidation ◽  
Sulphide Minerals ◽  
Electrochemical Processes ◽  
Refractory Gold ◽  
Points Of View ◽  
Galvanic Interaction ◽  
Spontaneous Oxidation ◽  
Gold Bearing

This paper presents the most important studies on the oxidation of pyrite particularly in aqueous solutions. The consequences of pyrite oxidation was examined, as well as its importance, from both the technical-technological and environmental points of view. The oxidation of pyrite was considered in two parts. The spontaneous oxidation of pyrite in nature was described in the first part, with this part comprising pyrite oxidation in deposits depots and mines. It is explained how way natural electrochemical processes lead to the decomposition of pyrite and other minerals associated with pyrite. The oxidation of pyrite occurring during technological processes such as grinding, flotation and leaching, was shown in the second part. Particular emphasis was placed on the oxidation of pyrite during leaching. This part includes the leaching of sulphide and oxide ores, the leaching of pyrite coal and the leaching of refractory gold-bearing ores (pressure oxidation, bacterial oxidation, oxidation by means of strong oxidants and the electrolysis of pyrite suspensions). Various mechanisms of pyrite oxidation and of the galvanic interaction of pyrite with other sulphide minerals are shown.

A High Voltage Electron Microscopy Study of Sub-Oxide Formation in Vanadium

1971 ◽  
Vol 29 ◽  
pp. 212-213
Author(s):  
R. H. Geiss ◽  
R. L. Ladd ◽  
K. R. Lawless
Keyword(s):  
High Vacuum ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ultra High Vacuum ◽  
Pure Oxygen ◽  
Pressure Oxidation ◽  
High Voltage Electron Microscopy ◽  
Oxidation Study ◽  
Voltage Electron ◽  
Good Agreement

Detailed electron microscope and diffraction studies of the sub-oxides of vanadium have been reported by Cambini and co-workers, and an oxidation study, possibly complicated by carbon and/or nitrogen, has been published by Edington and Smallman. The results reported by these different authors are not in good agreement. For this study, high purity polycrystalline vanadium samples were electrochemically thinned in a dual jet polisher using a solution of 20% H2SO4, 80% CH3OH, and then oxidized in an ion-pumped ultra-high vacuum reactor system using spectroscopically pure oxygen. Samples were oxidized at 350°C and 100μ oxygen pressure for periods of 30,60,90 and 160 minutes. Since our primary interest is in the mechanism of the low pressure oxidation process, the oxidized samples were cooled rapidly and not homogenized. The specimens were then examined in the HVEM at voltages up to 500 kV, the higher voltages being necessary to examine thick sections for which the oxidation behavior was more characteristic of the bulk.

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Respiratory energy requirements and rate of protein turnover in vivo determined by the use of an inhibitor of protein synthesis and a probe to assess its effect

1994 ◽  
Vol 92 (4) ◽  
pp. 585-594 ◽  
Author(s):  
T. J. Bouma ◽  
R. De Visser ◽  
J. H. J. A. Janssen ◽  
M. J. De Kock ◽  
P H. Van Leeuwen ◽  
...  
Keyword(s):  
Protein Synthesis ◽  
Protein Turnover ◽  
Energy Requirements ◽  
Inhibitor Of Protein Synthesis
Sign in / Sign up

Export Citation Format

Share Document