AIIIBV quaternary solid solution liquid phase epitaxy near immiscibility range: InGaAsSb/GaSb

1991 ◽  
Vol 70 (3) ◽  
pp. 171-175
Author(s):  
A. E. Bochkarev ◽  
L. M. Dolginov
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Quaternary Solid Solution

Liquid phase epitaxy of (Sn2)1−x (InSb)x solid solution layers

2002 ◽  
Vol 28 (11) ◽  
pp. 927-928 ◽  
Author(s):  
A. S. Saidov ◽  
A. Sh. Razzakov ◽  
D. V. Saparov
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy

Growth of SiC and SiC-AlN solid solution by container-free liquid phase epitaxy

1993 ◽  
Vol 128 (1-4) ◽  
pp. 343-348 ◽  
Author(s):  
Vladimir Dmitriev ◽  
Arthur Cherenkov
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy

The Effect of Composition Dependent Lattice Strain on the Chemical Potential of Tellurium in Pb1−xSnxSe1−yTey Quaternary Alloys

1993 ◽  
Vol 311 ◽  
Author(s):  
Patrick J. Mccann
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Strain Energy ◽  
Lattice Strain ◽  
Chemical Potential ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
X Ray ◽  
Lattice Matched

ABSTRACTIV-VI semiconductor Pb1−xsSnxsSe1−ysTeys quaternary alloys were grown on (111) BaF2 by liquid phase epitaxy (LPE). X-ray diffraction analysis shows that liquid (Pb1−x1Snx1)0.99(Se1−y1Tey1)0.01 solutions produce alloys lattice-matched with the substrate wheny1 = 60%, 58%, and 57%, and x1 = 20%, 40%, and 60%, respectively. These data suggest that the chemical potential of tellurium in the Pb1−xsSnxsSe1−ysTeys solid solution decreases as tin and tellurium concentrations increase. It is argued that this reduction is due to decreasing strain energy driven segregation of tellurium from the solid to the liquid as the tin concentration increases.

RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

2019 ◽  
Vol 6 (3) ◽  
pp. 16-21
Author(s):  
Amin Safarbaevich Saidov ◽  
Kobil Asharovich Amonov ◽  
Ada Yul'evna Leyderman
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Experimental Results ◽  
Complex Nature ◽  
Silicon Substrates ◽  
The Third ◽  
Current Voltage ◽  
Current Voltage Characteristics

The possibility of growing of the solid solution (Si2)1 - x - y (Ge2)x (ZnSe)y on silicon substrates by liquid-phase epitaxy from the tin solution - melt has been shown. The current - voltage characteristics of heterostructures at room temperature has three sections: ohmic section - I ~ V , exponential one - I ~ exp ( qV / ckT ), and the third one with cubic dependence - I ~ V3 that at increasingtemperature is replaced by the weaker dependences - I ~ V2,8, I ~ V2,5 and I ~ V2,3 at temperatures of 360, 390 and 420 K, respectively. The experimental results are explained on the basis of theoretical ideas about the complex nature of the recombination processesin these materials.

Liquid phase epitaxy of (GaAs)1−x (ZnSe)x solid solution layers from a lead-based solution melt

2001 ◽  
Vol 27 (11) ◽  
pp. 973-974 ◽  
Author(s):  
A. S. Saidov ◽  
A. Sh. Razzakov ◽  
K. G. Gaimnazarov
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy

Numerical modelling for convection in growth/dissolution of solid solution CdXHg1−XTe by liquid-phase epitaxy

2004 ◽  
Vol 269 (2-4) ◽  
pp. 284-291 ◽  
Author(s):  
I.A. Denisov ◽  
O.S. Mazhorova ◽  
Yu.P. Popov ◽  
N.A. Smirnova
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Numerical Modelling ◽  
Liquid Phase Epitaxy
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