Thermoelectric properties of the 0.05 wt.% SbI3-Doped n-Type Bi2(Te0. 95Se0. 05)3 alloy fabricated by the hot pressing method

2000 ◽  
Vol 6 (1) ◽  
pp. 67-71 ◽  
Author(s):  
Sun Kyung Lee ◽  
Tae Sung Oh ◽  
Dow Bin Hyun ◽  
Chang Won Hwang
Keyword(s):  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Pressing Method

Thermoelectric Properties on SixGe1-x Containing Fullerite

2007 ◽  
Vol 280-283 ◽  
pp. 409-412 ◽  
Author(s):  
Gui Ying Xu ◽  
Xiao Feng Wu ◽  
Li Li Zhang ◽  
Chang Chun Ge
Keyword(s):  
Quantum Dot ◽  
Thermoelectric Property ◽  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Analytical Method ◽  
Hot Pressing ◽  
Thermoelectric Generator ◽  
Pressing Method ◽  
Higher Temperature ◽  
P Type

SixGe1-x (x = 0.75 for n-type and 0.7 for p-type) is a typical thermoelectric material used at higher temperature as thermoelectric generator. Its property is dependent on the composition. SixGe1-x containing different amount of fullerite added as hollow quantum dot were fabricated by hot-pressing method. The relations among thermoelectric property, the amount of fullerite and the microstructure were investigated by normal measurement and analytical method.

Thermoelectric Properties on n-Type BixSb1-x /Bi2Te3 Graded Materials Containing Fullerite or Carbon Tube

2005 ◽  
Vol 475-479 ◽  
pp. 1591-1594
Author(s):  
Xiao Feng Wu ◽  
Gui Ying Xu ◽  
Si-Tong Niu ◽  
Chang Chun Ge
Keyword(s):  
Thermoelectric Property ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Analytical Method ◽  
Hot Pressing ◽  
Graded Materials ◽  
Pressing Method ◽  
Carbon Tube ◽  
Materials Used ◽  
Lower Temperature

BixSb1-x and Bi2Te3 are typical thermoelectric materials used for lower temperature. Samples of Graded materials containing different amount of fullerite or nanometer carbon tube and the were fabricated by hot pressing method. The relations about thermoelectric property, the addition of fullerite or nanometer carbon tube, and the microstructure were investigated in detail by normal measurement or analytical method.

Thermoelectric properties of p-type (Bi,Sb)2Te3 alloys fabricated by the hot pressing method

1998 ◽  
Vol 4 (1) ◽  
pp. 75-81 ◽  
Author(s):  
Hee-Jeong Kim ◽  
Hang-Chong Kim ◽  
Dow-Bin Hyun ◽  
Tae-Sung Oh
Keyword(s):  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Pressing Method ◽  
P Type

scholarly journals Thermoelectric properties of (AgSbTe2)100-x (GeTe)x fabricated by hot pressing method

2012 ◽  
Vol 61 (8) ◽  
pp. 087202
Author(s):  
Huo Feng-Ping ◽  
Wu Rong-Gui ◽  
Xu Gui-Ying ◽  
Niu Si-Tong
Keyword(s):  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Pressing Method

Thermoelectric properties of 25%Bi2Te3-75%Sb2Te3 solid solution prepared by hot-pressing method

1997 ◽  
Vol 58 (4) ◽  
pp. 671-678 ◽  
Author(s):  
Hyun Soo Shin ◽  
Heon Phil Ha ◽  
Dow Bin Hyun ◽  
Jae Dong Shim ◽  
Dong Hi Lee
Keyword(s):  
Solid Solution ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Pressing Method

scholarly journals Preparation and properties of Bi-system high-Tc superconductors by hot-pressing method.

1991 ◽  
Vol 38 (2) ◽  
pp. 237-241 ◽  
Author(s):  
Masahiro Kojima ◽  
Yuuki Horata ◽  
Yuichi Ishikawa ◽  
Shuji Yoshizawa
Keyword(s):  
Hot Pressing ◽  
High Tc Superconductors ◽  
Pressing Method ◽  
High Tc

scholarly journals Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacuum Hot Pressing

2019 ◽  
Vol 9 (8) ◽  
pp. 1609 ◽  
Author(s):  
A. K. M. Ashiquzzaman Shawon ◽  
Soon-Chul Ur
Keyword(s):  
Mechanical Properties ◽  
Intermetallic Compound ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Single Phase ◽  
Aluminum Antimonide ◽  
Simple Method ◽  
Group Iii ◽  
Indirect Band Gap ◽  
First Time

Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb is one of the least discovered of this family of semiconductors. Bulk synthesis of AlSb has been reported on numerous occasions, but obtaining a single phase has always proven to be extremely difficult. This work reports a simple method for the synthesis of single-phase AlSb. Subsequently, consolidation was done into a near single-phase highly dense semiconductor in a form usable for thermoelectric applications. Further, the thermoelectric properties of this system are accounted for the first time. In addition, the mechanical properties of the intermetallic compound are briefly discussed for a possibility of further use.

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
A Value ◽  
Si Doped

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.

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