Surface reconstruction for cross sectional data

1996 ◽  
Vol 11 (5) ◽  
pp. 471-479 ◽  
Author(s):  
Meihe Xu ◽  
Zesheng Tang
Keyword(s):  
Surface Reconstruction ◽  
Cross Sectional

Surface reconstruction for thin aero engine blade from disorganized contact measured points

2017 ◽  
Vol 232 (5) ◽  
pp. 746-758 ◽  
Author(s):  
Xuegeng Lyu ◽  
Hongying Yu ◽  
Jialu Wu
Keyword(s):  
Surface Reconstruction ◽  
Random Order ◽  
Sorting Algorithm ◽  
Cross Sectional ◽  
Contact Points ◽  
Quad Tree ◽  
Region Division ◽  
Reconstruction Methods ◽  
Machining System ◽  
Inverse Interpolation

Blade surface reconstruction is one of the necessary steps in blade adaptive machining system. The majority of the current reconstruction methods are based on point-cloud, which is obtained using noncontact measurements. Correspondingly, these methods are invalid when the points are obtained using contact measurements. In this paper, we studied the method of surface reconstruction for thin features based on measured contact points. Owing to the random order of the measured points, and the fact that when the distance between two measured points is larger than the wall thickness of the blade will lead to interpolation errors, a quad tree-based region division method, and a points sorting algorithm, are proposed for correctly ordering the points. On this basis, inverse interpolation of cross-sectional curves using a cubic NURBS curve is used to fit them and reconstruct surfaces. Surface reconstruction examples are presented herein, and a comparison between the reconstructed and designed surfaces is used to verify the validity of our method.

Automated Image Analysis Of Nuclear And Cytoplasmic Changes In Exfoliated Cells From Tracheas Treated With Carcinogen

1977 ◽  
Vol 35 ◽  
pp. 220-221
Author(s):  
S.F. Stinson ◽  
J.C. Lilga ◽  
M.B. Sporn
Keyword(s):  
Image Analysis ◽  
Pattern Analysis ◽  
Relative Proportion ◽  
Automated Image Analysis ◽  
Image Analyzer ◽  
Cross Sectional ◽  
Exfoliated Cells ◽  
Neoplastic Lesions ◽  
Analysis System ◽  
Morphologic Criterion

Increased nuclear size, resulting in an increase in the relative proportion of nuclear to cytoplasmic sizes, is an important morphologic criterion for the evaluation of neoplastic and pre-neoplastic cells. This paper describes investigations into the suitability of automated image analysis for quantitating changes in nuclear and cytoplasmic cross-sectional areas in exfoliated cells from tracheas treated with carcinogen.Neoplastic and pre-neoplastic lesions were induced in the tracheas of Syrian hamsters with the carcinogen N-methyl-N-nitrosourea. Cytology samples were collected intra-tracheally with a specially designed catheter (1) and stained by a modified Papanicolaou technique. Three cytology specimens were selected from animals with normal tracheas, 3 from animals with dysplastic changes, and 3 from animals with epidermoid carcinoma. One hundred randomly selected cells on each slide were analyzed with a Bausch and Lomb Pattern Analysis System automated image analyzer.

X-Ray Replication of Submicrometer Linewidth Patterns

1977 ◽  
Vol 35 ◽  
pp. 136-137
Author(s):  
Henry I. Smith ◽  
D.C. Flanders
Keyword(s):  
Electron Beam Lithography ◽  
Cross Sectional ◽  
X Ray ◽  
Electron Backscattering ◽  
Spatial Frequencies ◽  
Cross Sectional Profile ◽  
Carbon Foils ◽  
Sectional Profile ◽  
And Control ◽  
Soft Radiation

Scanning electron beam lithography has been used for a number of years to write submicrometer linewidth patterns in radiation sensitive films (resist films) on substrates. On semi-infinite substrates, electron backscattering severely limits the exposure latitude and control of cross-sectional profile for patterns having fundamental spatial frequencies below about 4000 Å(l),Recently, STEM'S have been used to write patterns with linewidths below 100 Å. To avoid the detrimental effects of electron backscattering however, the substrates had to be carbon foils about 100 Å thick (2,3). X-ray lithography using the very soft radiation in the range 10 - 50 Å avoids the problem of backscattering and thus permits one to replicate on semi-infinite substrates patterns with linewidths of the order of 1000 Å and less, and in addition provides means for controlling cross-sectional profiles. X-radiation in the range 4-10 Å on the other hand is appropriate for replicating patterns in the linewidth range above about 3000 Å, and thus is most appropriate for microelectronic applications (4 - 6).

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