Local-field corrections to the binding energies of core excitons and shallow impurities in semiconductors

1979 ◽  
Vol 54 (2) ◽  
pp. 497-507 ◽  
Author(s):  
V. E. Godwin ◽  
E. Tosatti
Keyword(s):  
Local Field ◽  
Binding Energies ◽  
Impurities In Semiconductors ◽  
Shallow Impurities

Free and Bound Excitons in GaN Epitaxial Films

1996 ◽  
Vol 449 ◽  
Author(s):  
B.K. Meyer
Keyword(s):  
Thermal Activation ◽  
Chemical Nature ◽  
Epitaxial Films ◽  
Binding Energies ◽  
Temperature Dependent ◽  
Neutral Donor ◽  
Exciton Localization ◽  
Sapphire Substrates ◽  
Shallow Donors ◽  
Shallow Impurities

ABSTRACTWe report on photoluminescence experiments on hexagonal GaN epitaxial films grown on 6H-SiC and sapphire substrates by organo-metallic and hydide vapor phase epitaxy. At low temperatures we observe free and neutral donor bound exciton transitions which allow to establish properties of the free excitons and localisation energies of the bound excitons involving different shallow donors. From temperature dependent luminescence experiments thermal activation energies are determined which measure the exciton localization and donor binding energies. The localization energies of the excitons scale with the respective donor binding energies (Haynes rule). The inter-impurity transitions of neutral donors are observed in fourier transform infra-red absorption. Three shallow donors with binding energies of 34.7 meV, 55 meV and 58 meV can be seen. We present evidence for the chemical nature of the shallow impurities.

scholarly journals FOURIER TRANSFORM PHOTOTHERMAL IONIZATION SPEC-TROSCOPY OF SHALLOW IMPURITIES IN SEMICONDUCTORS

1989 ◽  
Vol 38 (11) ◽  
pp. 1869
Author(s):  
YU ZHI-YI ◽  
HUANG YE-XIAO ◽  
CHEN JIAN-XIANG ◽  
YE HONG-JUAN ◽  
SHEN XUE-CHU ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Impurities In Semiconductors ◽  
Photothermal Ionization ◽  
Shallow Impurities

A universal trend in the binding energies of deep impurities in semiconductors

1984 ◽  
Vol 45 (6) ◽  
pp. 671-673 ◽  
Author(s):  
M. J. Caldas ◽  
A. Fazzio ◽  
Alex Zunger
Keyword(s):  
Binding Energies ◽  
Impurities In Semiconductors

Local field corrections to binding energies of substitutional and interstitial donors in Si and Ge

1981 ◽  
Vol 39 (9) ◽  
pp. 1013-1016 ◽  
Author(s):  
R. Car ◽  
Annabella Selloni ◽  
M. Altarelli
Keyword(s):  
Local Field ◽  
Binding Energies
Sign in / Sign up

Export Citation Format

Share Document