Forward- and backward-angle regge-pole contribution in the presence of coulomb interaction

1980 ◽  
Vol 55 (4) ◽  
pp. 456-474 ◽  
Author(s):  
R. Anni ◽  
L. Renna ◽  
L. Taffara
1966 ◽  
Vol 23 (4) ◽  
pp. 272-274 ◽  
Author(s):  
W. Drechsler
Keyword(s):  

1983 ◽  
Vol 141 (11) ◽  
pp. 552
Author(s):  
D.A. Kirzhnits ◽  
F.M. Pen'kov

2016 ◽  
pp. 4024-4028 ◽  
Author(s):  
Sergey I. Pokutnyi ◽  
Wlodzimierz Salejda

The possibility of occurrence of the excitonic  quasimolecule formed of spatially separated electrons and holes in a nanosystem that consists  of  CuO quantum dots synthesized in a silicate glass matrix. It is shown that the major contribution to the excitonic quasimolecule binding energy is made by the energy of the exchange interaction of electrons with holes and this contribution is much more substantial than the contribution of the energy of Coulomb interaction between the electrons and holes.


1991 ◽  
Vol 177 (1-3) ◽  
pp. 578-584 ◽  
Author(s):  
Daniel C. Mattis ◽  
Douglas Henderson

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
E. V. Kirichenko ◽  
V. A. Stephanovich

AbstractWe study the joint effect of disorder and Coulomb interaction screening on the exciton spectra in two-dimensional (2D) structures. These can be van der Waals structures or heterostructures of organic (polymeric) semiconductors as well as inorganic substances like transition metal dichalcogenides. We consider 2D screened hydrogenic problem with Rytova–Keldysh interaction by means of so-called fractional Scrödinger equation. Our main finding is that above synergy between screening and disorder either destroys the exciton (strong screening) or promote the creation of a bound state, leading to its collapse in the extreme case. Our second finding is energy levels crossing, i.e. the degeneracy (with respect to index $$\mu $$ μ ) of the exciton eigenenergies at certain discrete value of screening radius. Latter effects may also be related to the quantum manifestations of chaotic exciton behavior in above 2D semiconductor structures. Hence, they should be considered in device applications, where the interplay between dielectric screening and disorder is important.


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