Monte Carlo simulation of the energy dissipation profiles of 30, 50 and 100 keV incident beams in a layered structure in electron beam lithography

1987 ◽  
Vol 4 (1) ◽  
pp. 46-52
Author(s):  
Sun Yuping ◽  
Liu Hua
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Dissipation ◽  
Layered Structure ◽  
Electron Beam Lithography

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

Electron beam scattering in an organic specimen

1978 ◽  
Vol 36 (1) ◽  
pp. 206-207
Author(s):  
Ilesanmi Adesida
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Dissipation ◽  
Primary Electron ◽  
Organic Sample ◽  
Direct Technique ◽  
Beam Scattering ◽  
Dissipation Processes ◽  
Scanning Electron

The understanding of electron-solid interactions is of prime importance to both conventional transmission and scanning electron microscopists. Monte Carlo simulation of electron beam scattering in various target samples has made fundamental contributions to this understanding, especially in scanning electron microscopy where primary electron beams of a few to many kilovolts are utilized. A significant example is the understanding of energy dissipation patterns of incident electrons in an organic sample (polymethylmethacrylate-PMMA) which is very useful in electron beam lithography (1). Furthermore, with the close similarity between the organic sample and a biological specimen, a Monte Carlo approach is also very useful for the study of energy dissipation in biological specimens (2).To enhance our knowledge of these dissipation processes, a more comprehensive Monte Carlo simulation program has been developed. The program is based on the semi-direct technique of simulating individual inelastic scattering and elastic scattering with probabilistic weightings.

Low-energy electron beam lithography: Monte Carlo simulation and experiment

1992 ◽  
Vol 50 (1) ◽  
pp. 386-387
Author(s):  
TJ. Stark ◽  
Z. J. Radzimski ◽  
P.A. Peterson ◽  
D.P. Griffis ◽  
P. E. Russell
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Loss ◽  
Electron Beam Lithography ◽  
High Current Density ◽  
Spot Size ◽  
Proximity Effects ◽  
Low Energy ◽  
Optical Systems

Recent advances in electron optical systems which allow reduction of electron beam voltage while maintaining sufficiently small spot size and high current density have opened new possibilities for electron beam lithography. The main advantage of low beam energy lithography is a reduction of backscattered electrons and, consequently, the reduction of problems associated with proximity effects. The other advantages of this technique are reduction in the dose required to modify a resist and minimization of substrate damage caused by energetic electrons. Proper electron energy must be chosen at which the beam deposits its energy mainly within the resist film with minimal penetration into the substrate. Monte Carlo simulation programs have been used widely to predict the scattering interactions and thus the area of proximity effects. Rutherford cross section for angle scattering and Bethe energy loss have been commonly used in Monte Carlo modeling. However, low energy lithography (<5keV) requires a more accurate approach based on Mott cross sections for scattering and a more precise formula for energy loss replacing the Bethe law which is invalid below 1 keV energy.

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