Room-temperature deposition of yttria-stabilized zirconia buffer layer on metallic substrates by laser ablation

1997 ◽  
Vol 42 (16) ◽  
pp. 1345-1350
Author(s):  
Xuming Xiong ◽  
Yueliang Zhou ◽  
Zhenghao Chen ◽  
Huibin Lü ◽  
Aijun Zhu ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Buffer Layer ◽  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Metallic Substrates ◽  
Temperature Deposition

Ferroelectric La-Sr-Co-O / Pb-Zr-TI-O / La-Sr-Co-O Heterostructures on Silicon: Reliability Testing

1993 ◽  
Vol 310 ◽  
Author(s):  
R. Ramesh ◽  
T. Sands ◽  
V. G. Keramidas ◽  
D.K. Fork
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Applied Field ◽  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Layered Perovskite ◽  
Reliability Testing ◽  
Stabilized Zirconia ◽  
Thin Film Capacitors ◽  
Large Remnant Polarization

AbstractWe report results of pulsed electrical testing of ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 thin film capacitors with symmetrical La-Sr-Co-O top and bottom electrodes at room temperature and at 100°C. They have been grown on [001] Si with a Yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite “template” layer (200-300Å thick), grown between the YSZ buffer layer and the bottom La-Sr-Co-O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with Y-Ba-Cu-O (YBCO) top and bottom electrodes, these structures possess two advantages : (1) the growth temperatures are lower by 60-150°C; (ii) the capacitors show a large remnant polarization, δP, ( δP = switched polarization -non-switched polarization), 25-30 μC/cm2, for an applied voltage of only 2V (applied field of 70kV/cm). The fatigue, retention and aging characteristics of these new structures are excellent at both room temperature and at 100°C.

Study of Y1Ba2Cu3O7−δfilm growth on (200) oriented yttria stabilized zirconia buffer layer on metallic substrates

1994 ◽  
Vol 65 (1) ◽  
pp. 109-111 ◽  
Author(s):  
R. Chatterjee ◽  
M. Fukutomi ◽  
S. Aoki ◽  
K. Togano ◽  
H. Maeda
Keyword(s):  
Buffer Layer ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Metallic Substrates

Off-Axis Growth of Y1Ba2Cu3O7-y on Different Substrates

1992 ◽  
Vol 275 ◽  
Author(s):  
P. R. Broussard ◽  
V. C. Cestone ◽  
Laura H. Allen ◽  
M. E. Reeves
Keyword(s):  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Superconducting Properties ◽  
Stabilized Zirconia ◽  
Dc Sputtering ◽  
Sputtering Pressure

ABSTRACTFilms of Y1Ba2Cu3O7-y have been grown by off-axis DC sputtering onto substrates of (100) SrTiO3. LaAlO, LaGaO3, Yttria-stabilized Zirconia, and MgO. Our best films, grown on SrTiO3 substrates at a temperature of 650°C and a sputtering pressure of 100 mTorr (consisting of 80 mTorr Ar and 20 mTorr O2) have room temperature resistivities of 280 μΩ-cm, an inductive Tcof 88 K and an inductive Jc 'Sof∼ 2.6 × 106 A/cm2 at 77 K and 3.9 × 107 A/cm2at 4.2 K. Films grown on YSZ tend to have higher resistivities (∼ 600 μΩ-cm) but still have Tc's of 86 K and Jc's of - 106 A/cm2 at 77 K. Films down to 550 Å still have Tc's of 86 K and Jc's at 77 K > 106 A/cm2. Films grown at lower temperatures (600°C) on S1TiO3 begin to show a-axis growth, but the superconducting properties deteriorate.

scholarly journals Deposition of yttria-stabilized zirconia buffer layer on Si and its suitability for Y-Ba-Cu-O thin films

1991 ◽  
Vol 14 (2) ◽  
pp. 423-427
Author(s):  
V R Katti ◽  
S K Gupta ◽  
A K Debnath ◽  
N C Jaydeven ◽  
L C Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

Performance Investigation of Dual Layer Yttria-Stabilized Zirconia–Samaria-Doped Ceria Electrolyte for Intermediate Temperature Solid Oxide Fuel Cells

2016 ◽  
Vol 13 (1) ◽  
Author(s):  
Ryan J. Milcarek ◽  
Kang Wang ◽  
Michael J. Garrett ◽  
Jeongmin Ahn
Keyword(s):  
Fuel Cell ◽  
Buffer Layer ◽  
Sintering Temperature ◽  
Solid Oxide ◽  
Yttria Stabilized Zirconia ◽  
Cell Performance ◽  
Doped Ceria ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Fuel Cell Performance

The performance of yttria-stabilized zirconia (YSZ)–samaria-doped ceria (SDC) dual layer electrolyte anode-supported solid oxide fuel cell (AS-SOFC) was investigated. Tape-casting, lamination, and co-sintering of the NiO–YSZ anode followed by wet powder spraying of the SDC buffer layer and BSCF cathode was proposed for fabrication of these cells as an effective means of reducing the number of sintering stages required. The AS-SOFC showed a significant fuel cell performance of ∼1.9 W cm−2 at 800 °C. The fuel cell performance varies significantly with the sintering temperature of the SDC buffer layer. An optimal buffer layer sintering temperature of 1350 °C occurs due to a balance between the YSZ–SDC contact and densification at low sintering temperature and reactions between YSZ and SDC at high sintering temperatures. At high sintering temperatures, the reactions between YSZ and SDC have a detrimental effect on the fuel cell performance resulting in no power at a sintering temperature of 1500 °C.

Heteroepitaxy of Ir films on silicon with a ceria/yttria stabilized zirconia buffer layer

2012 ◽  
Vol 520 (23) ◽  
pp. 6888-6892 ◽  
Author(s):  
V.G. Beshenkov ◽  
L.A. Fomin ◽  
D.V. Irzhak ◽  
V.A. Marchenko ◽  
V.I. Nikolaichik ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia
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