Migration and interaction of point defects at room temperature in crystalline silicon

1998 ◽  
Vol 21 (8) ◽  
pp. 1-52 ◽  
Author(s):  
V. Privitera ◽  
S. Coffa ◽  
F. Priolo ◽  
E. Rimini
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon

Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

1996 ◽  
Vol 438 ◽  
Author(s):  
F. Priolo ◽  
V. Privitera ◽  
S. Coffa ◽  
S. Libertino
Keyword(s):  
Diffusion Coefficient ◽  
Long Range ◽  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Temperature Diffusion ◽  
Range Migration ◽  
Limited Diffusion ◽  
Vacancy Type Defect

AbstractOur recent work on the room temperature migration and trapping phenomena of ion beam generated point defects in crystalline Si is reviewed. It is shown that a small fraction (∼ 10−6) of the defects generated at the surface by a shallow implant is injected into the bulk. These defects undergo a long range trap-limited diffusion and interact with both impurities, dopants and preexisting defects along their path. In particular, these interactions result in dopant deactivation and/or partial annihilation of pre-existing vacancy-type defect markers. It is found that in highly pure, epitaxial Si layers, these effects extend to several microns from the surface, demonstrating a long range migration of point defects at room temperature. By a detailed analysis of the experimental evidences we have identified the Si self-interstitials as the major responsible for the observed phenomena. This allowed us to give a lower limit of 6×10−11-cm2/s for the room temperature diffusion coefficient of the Si self-interstitials. Room temperature trap-limited migration of vacancies is also detected as a broadening in the divacancy profile of as implanted samples. In this case the room temperature diffusion coefficient of vacancies has been found to be ≥3 × 10−12 cm 2/s. These data are presented and their implications discussed.

Room temperature migration of ion beam injected point defects in crystalline silicon

1996 ◽  
Vol 120 (1-4) ◽  
pp. 9-13 ◽  
Author(s):  
Vittorio Privitera ◽  
Salvatore Coffa ◽  
Francesco Priolo ◽  
Kim Kyllesbech Larsen ◽  
Sebania Libertino ◽  
...  
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam

Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

1996 ◽  
Vol 439 ◽  
Author(s):  
F. Priolo ◽  
V. Privitera ◽  
S. Coffa ◽  
S. Libertino
Keyword(s):  
Diffusion Coefficient ◽  
Long Range ◽  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Temperature Diffusion ◽  
Range Migration ◽  
Limited Diffusion ◽  
Vacancy Type Defect

AbstractOur recent work on the room temperature migration and trapping phenomena of ion beam generated point defects in crystalline Si is reviewed. It is shown that a small fraction (˜10−6) of the defects generated at the surface by a shallow implant is injected into the bulk. These defects undergo a long range trap-limited diffusion and interact with both impurities, dopants and preexisting defects along their path. In particular, these interactions result in dopant deactivation and/or partial annihilation of pre-existing vacancy-type defect markers. It is found that in highly pure, epitaxial Si layers, these effects extend to several microns from the surface, demonstrating a long range migration of point defects at room temperature. By a detailed analysis of the experimental evidences we have identified the Si self-interstitials as the major responsible for the observed phenomena. This allowed us to give a lower limit of 6 × 10−11 cm2/s for the room temperature diffusion coefficient of the Si self-interstitials. Room temperature trap-limited migration of vacancies is also detected as a broadening in the divacancy profile of as implanted samples. In this case the room temperature diffusion coefficient of vacancies has been found to be ≥3 × 10−12 cm2/s. These data are presented and their implications discussed.

Investigation of the Hydrogen Transport Processes in Crystalline Silicon of n-Type Conductivity

2007 ◽  
Vol 131-133 ◽  
pp. 425-430 ◽  
Author(s):  
Anis M. Saad ◽  
Oleg Velichko ◽  
Yu P. Shaman ◽  
Adam Barcz ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Hydrogen Concentration ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Transport Processes ◽  
Concentration Profiles ◽  
Hydrogen Transport ◽  
Hydrogen Atoms ◽  
Near Surface ◽  
Type Conductivity ◽  
Hydrogen Molecules

The silicon substrates were hydrogenated at approximately room temperature and hydrogen concentration profiles vs. depth have been measured by SIMS. Czochralski grown (CZ) wafers, both n- and p-type conductivity, were used in the experiments under consideration. For analysis of hydrogen transport processes and quasichemical reactions the model of hydrogen atoms diffusion and quasichemical reactions is proposed and the set of equations is obtained. The developed model takes into account the formation of bound hydrogen in the near surface region, hydrogen transport as a result of diffusion of hydrogen molecules 2 H , diffusion of metastable complexes * 2 H and diffusion of nonequilibrium hydrogen atoms. Interaction of 2 H with oxygen atoms and formation of immobile complexes “oxygen atom - hydrogen molecule” (O - H2 ) is also taken into account to explain the hydrogen concentration profiles in the substrates of n-type conductivity. The computer simulation based on the proposed equations has shown a good agreement of the calculated hydrogen profiles with the experimental data and has allowed receiving a value of the hydrogen molecules diffusivity at room temperature.

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

2006 ◽  
Vol 504 (1-2) ◽  
pp. 269-273
Author(s):  
H.Y. Chan ◽  
M.P. Srinivasan ◽  
F. Benistant ◽  
K.R. Mok ◽  
Lap Chan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Continuum Modeling ◽  
Implantation Damage ◽  
Post Implantation

Photoluminescence of Erbium-Diffused Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
H. Horiguchi ◽  
T. Kinone ◽  
R. Saito ◽  
T. Kimura ◽  
T. Ikoma
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Luminescence Spectra ◽  
Main Peak ◽  
Silicon Substrates ◽  
Annealing Atmosphere ◽  
Full Width ◽  
Half Maximum ◽  
Strong Luminescence ◽  
Fine Structures

AbstractErbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+02 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μ m.The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤ 0.5nm at 20K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

scholarly journals Tight-Binding Molecular Dynamics Simulations on Point Defects Diffusion and Interactions in Crystalline Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
M. tang ◽  
L. colombo ◽  
T. Diaz De La Rubia
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Point Defects ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Diffusion Path ◽  
Binding Energies ◽  
Defect Clusters ◽  
Dynamics Simulations

AbstractTight-binding molecular dynamics (TBMD) simulations are performed (i) to evaluate the formation and binding energies of point defects and defect clusters, (ii) to compute the diffusivity of self-interstitial and vacancy in crystalline silicon, and (iii) to characterize the diffusion path and mechanism at the atomistic level. In addition, the interaction between individual defects and their clustering is investigated.

Room Temperature Band-Edge Luminescence from Silicon Grains Prepared by the Recrystallization of Mesoporous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
Karen L. Moore ◽  
Leonid Tsybeskov ◽  
Philippe M. Fauchet ◽  
Dennis G. Hall
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Band Edge ◽  
Applied Bias ◽  
Mesoporous Silicon ◽  
Room Temperature Photoluminescence ◽  
Band Edge Luminescence ◽  
A Current ◽  
Better Than

AbstractRoom-temperature photoluminescence (PL) peaking at 1.1 eV has been found in electrochemically etched mesoporous silicon annealed at 950°C. Low-temperature PL spectra clearly show a fine structure related to phonon-assisted transitions in pure crystalline silicon (c-Si) and the absence of defect-related (e.g.P-line) and impurity-related (e.g.oxygen, boron) transitions. The maximum PL external quantum efficiency (EQE) is found to be better than 0.1% with a weak temperature dependence in the region from 12K to 400K. The PL intensity is a linear function of excitation intensity up to 100 W/cm2. The PL can be suppressed by an external electric field ≥ 105 V/cm. Room temperature electroluminescence (EL) related to the c-Si band-edge is also demonstrated under an applied bias ≤ 1.2 V and with a current density ≈ 20 mA/cm2. A model is proposed in which the radiative recombination originates from recrystallized Si grains within a non-stoichiometric Si-rich silicon oxide (SRSO) matrix.

Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 717-720 ◽  
Author(s):  
Sashi Kumar Chanda ◽  
Yaroslav Koshka ◽  
Murugesu Yoganathan
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Room Temperature ◽  
Vanadium Content ◽  
Mapping Technique ◽  
Native Defect ◽  
Room Temperature Photoluminescence ◽  
Native Point Defects ◽  
Pl Mapping ◽  
Resistivity Variation

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.

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