Effect of transverse static magnetic field on stimulated brillouin scattering of electromagnetic wave

Pramana ◽  
1980 ◽  
Vol 14 (1) ◽  
pp. 25-33
Author(s):  
S Guha ◽  
N Apte
Keyword(s):  
Magnetic Field ◽  
Electromagnetic Wave ◽  
Static Magnetic Field ◽  
Brillouin Scattering ◽  
Stimulated Brillouin Scattering ◽  
Stimulated Brillouin

Stimulated Brillouin scattering of an electromagnetic wave in a magnetoactive dissipative multi-ion-species plasma

1995 ◽  
Vol 53 (2) ◽  
pp. 127-133 ◽  
Author(s):  
M. Bose
Keyword(s):  
Growth Rate ◽  
Electromagnetic Wave ◽  
Acoustic Waves ◽  
Brillouin Scattering ◽  
Negative Ions ◽  
Stimulated Brillouin Scattering ◽  
Magnetized Plasma ◽  
Ion Acoustic Waves ◽  
Stimulated Brillouin ◽  
Ion Species

Stimulated Brillouin scattering of an electromagnetic wave is investigated analytically in a dissipative magnetized plasma in the presence of negative ions. With an increase in the number of negative ions (maintaining quasi-neutrality), it is found that the growth rate of ion-acoustic waves decreases very slowly up to 50% concentration (i.e. half of the total ionic contribution) of negative ions. Further increase in the number density of negative ions beyond 50% results in a sharp fall in growth rate.

INFLUENCE OF PIEZOELECTRICITY AND MAGNETIC FIELD ON STIMULATED BRILLOUIN SCATTERING IN III–V SEMICONDUCTORS

2006 ◽  
Vol 15 (04) ◽  
pp. 465-479 ◽  
Author(s):  
M. SINGH ◽  
P. AGHAMKAR ◽  
N. KISHORE ◽  
PRANAY K. SEN
Keyword(s):  
Magnetic Field ◽  
Brillouin Scattering ◽  
Phase Conjugation ◽  
Stimulated Brillouin Scattering ◽  
Gain Coefficient ◽  
Analytical Investigation ◽  
Magnetostatic Field ◽  
Brillouin Gain ◽  
Nonlinear Devices ◽  
Stimulated Brillouin

Using electromagnetic treatment, a detailed analytical investigation of stimulated Brillouin scattering (SBS) has been made for a semiconducting crystal in the presence of an external magnetostatic field. The effect of piezoelectricity (β) and magnetic field [Formula: see text] has been introduced through equation of motion of lattice vibration and Lorentz force, respectively. The analysis is applied to both cases viz. non-piezoelectric (β = 0) and piezoelectric (β ≠ 0) in the absence (B0 =0) and the presence (B0 ≠ 0) of external magnetostatic field. The numerical estimates are made for n-type InSb crystals, taken as representative III–V semiconductor, duly shined upon by pulsed 10.6 μm CO 2 laser. The inclination of applied magnetostatic field with respect to the direction of propagation of pump beam is found to augment the gain coefficient for the onset of stimulated Brillouin scattering. Moreover, the SBS gain coefficient increases with increasing scattering angle and results in a maximum value for the backscattered mode. The backward Brillouin gain is found to be nearly 104 times larger than forward gain when β ≠ 0 and B0 = 10T. The analysis also suggests the possibility of observing optical phase conjugation reflectivity as high as 106 in the weakly piezoelectric doped semiconductors with moderate magnetostatic field. The numerical estimation suggests that piezoelectric doped III–V semiconductors in the presence of magnetic field are candidate materials for fabrication of cubic nonlinear devices.

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