Thermal quenching of luminescence in erbium doped semiconductors

Pramana ◽  
1997 ◽  
Vol 48 (6) ◽  
pp. 1145-1149
Author(s):  
B Chanda ◽  
D N Bose
Keyword(s):  
Thermal Quenching ◽  
Doped Semiconductors ◽  
Erbium Doped ◽  
Quenching Of Luminescence

Photoluminescence Study of Energy Transfer Processes in Erbium Doped AlxGal−xAs Grown by MBE

1993 ◽  
Vol 301 ◽  
Author(s):  
Tong Zhang ◽  
J. Sun ◽  
N.V. Edwards ◽  
D.E. Moxey ◽  
R.M. Kolbas ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Energy Levels ◽  
Coupling Efficiency ◽  
Thermal Quenching ◽  
Energy Bands ◽  
Doped Semiconductors ◽  
Co Doping ◽  
Erbium Ions ◽  
Erbium Doped ◽  
First Time

ABSTRACTSharp photoluminescence from the intra-4f shell of Er3+ is observed from erbium doped AlxGal-xAs (0 ≤x ≤ 1) grown by molecular beam epitaxy. The intensity of the luminescence from the erbium is strongly dependent on the aluminum composition with a maximum at x ≈ 0.6. We will present a model that explains the variation in intensity based on the energy transfer coupling efficiency between the host semiconductor and the optically active erbium ions. The coupling efficiency is dominated by the alignment or misalignment of the erbium energy levels with the energy bands of the host semiconductor and by the excess carrier lifetime in the host. The data and model, which are presented here for the first time, are consistent with our previous work on the effects of co-doping with Be or Si and with other workers' measurements of thermal quenching in rare earth doped semiconductors.

Thermal Quenching of Luminescence in a Disordered Compound: EuNa2Mg2 (  VO 4 ) 3

1980 ◽  
Vol 127 (3) ◽  
pp. 694-701 ◽  
Author(s):  
Hajime Yamamoto ◽  
Setsuko Seki ◽  
Jean‐Pierre Jeser ◽  
Tsutomu Ishiba
Keyword(s):  
Thermal Quenching ◽  
Quenching Of Luminescence

scholarly journals Люминофоры холодного голубого излучения на основе оксида алюминия, допированного диспрозием

2022 ◽  
Vol 64 (1) ◽  
pp. 95
Author(s):  
И.В. Бакланова ◽  
В.Н. Красильников ◽  
А.П. Тютюнник ◽  
Я.В. Бакланова
Keyword(s):  
Crystal Structure ◽  
Phase Composition ◽  
Diffraction Analysis ◽  
Powder Diffraction ◽  
Thermal Quenching ◽  
Emission Spectra ◽  
X Ray ◽  
White Emission ◽  
Uv Excitation ◽  
Quenching Of Luminescence

Al2О3:Dy3+ oxides with different colors luminescence were synthesized using precursor technology. The phase composition and crystal structure of the obtained materials were established by X-ray powder diffraction analysis. The excitation and emission spectra, decay curves, thermal quenching of luminescence were studied. Under UV excitation, the phosphors exhibit blue, purplish blue, white emission depending on the concentration of dysprosium and the temperature of annealing of the Al1-xDyx(OH)(HCOO)2 precursor in air.

Unraveling the Mechanisms of Thermal Quenching of Luminescence in Ce3+-Doped Garnet Phosphors

2019 ◽  
Vol 31 (11) ◽  
pp. 3851-3862 ◽  
Author(s):  
Yuan-Chih Lin ◽  
Marco Bettinelli ◽  
Maths Karlsson
Keyword(s):  
Thermal Quenching ◽  
Quenching Of Luminescence

Thermal quenching of luminescence processes in feldspars

1995 ◽  
Vol 24 (1) ◽  
pp. 57-66 ◽  
Author(s):  
N.R.J Poolton ◽  
L Bøtter-Jensen ◽  
G.A.T Duller
Keyword(s):  
Thermal Quenching ◽  
Quenching Of Luminescence

Mechanism for thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy: Role of nonradiative defects

1997 ◽  
Vol 71 (25) ◽  
pp. 3676-3678 ◽  
Author(s):  
I. A. Buyanova ◽  
W. M. Chen ◽  
G. Pozina ◽  
B. Monemar ◽  
W.-X. Ni ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Thermal Quenching ◽  
Quenching Of Luminescence
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