In-situ studies of microzooplankton grazing pressure on phytoplankton in Jiaozhou Bay, China

2004 ◽  
Vol 22 (2) ◽  
pp. 162-165
Author(s):  
Wang Yong ◽  
Sun Hekun ◽  
Zhou Yi
2017 ◽  
Vol 41 (3) ◽  
pp. 545-557
Author(s):  
Gabriela María Esqueda-Escárcega ◽  
Sergio Hernández-Trujillo ◽  
Gerardo Aceves-Medina ◽  
Sonia Futema-Jiménez ◽  
José Reyes Hernández-Alfonso

Phytoplankton growth and microzooplankton grazing rates in situ, were studied in a fixed sampling station from October 2007 to August 2008, at the Ensenada de La Paz, Mexico, using the dilution method. The apparent growth rate of phytoplankton was higher in December (1.33 d-1) and lower in October (0.35 d-1). The grazing rate was highest in April (0.86 d-1) and minimum in February and August (0.38 d-1). Grazing pressure, measured as the percentage of potential production removed (% PPR) varied between 28 and 76%. The relationship between phytoplankton growth and grazing rate indicates that chlorophyll-a production is consumed by approximately 50%, involving other processes that cause mortality of phytoplankton, as sedimentation rate and mesozooplankton grazing. The finding of moderate grazing in autumn and a clear growth and consumption in the winter are features that require monitoring in larger temporal and spatial scales.


Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.


2020 ◽  
Vol 30 ◽  
pp. 53-58
Author(s):  
Kirill Kurgan ◽  
Anatoliy Klopotov ◽  
Vasiliy Klimenov ◽  
Michael Slobodyan ◽  
Artem Ustinov ◽  
...  

2019 ◽  
Vol 9 (7) ◽  
pp. 1310 ◽  
Author(s):  
Kerstin Hauke ◽  
Johannes Kehren ◽  
Nadine Böhme ◽  
Sinje Zimmer ◽  
Thorsten Geisler

In the last decades, Raman spectroscopy has become an important tool to identify and investigate minerals, gases, glasses, and organic material at room temperature. In combination with high-temperature and high-pressure devices, however, the in situ investigation of mineral transformation reactions and their kinetics is nowadays also possible. Here, we present a novel approach to in situ studies for the sintering process of silicate ceramics by hyperspectral Raman imaging. This imaging technique allows studying high-temperature solid-solid and/or solid-melt reactions spatially and temporally resolved, and opens up new avenues to study and visualize high-temperature sintering processes in multi-component systems. After describing in detail the methodology, the results of three application examples are presented and discussed. These experiments demonstrate the power of hyperspectral Raman imaging for in situ studies of the mechanism(s) of solid-solid or solid-melt reactions at high-temperature with a micrometer-scale resolution as well as to gain kinetic information from the temperature- and time-dependent growth and breakdown of minerals during isothermal or isochronal sintering.


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