Plasma-enhanced chemical vapordeposition SiO2 film after ion implantation induces quantum well intermixing

2006 ◽  
Vol 21 (4) ◽  
pp. 105-107
Author(s):  
Peng Jucun ◽  
Wu Boying ◽  
Chen Jie ◽  
Zhao Jie ◽  
Wang Yongchen
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Sio2 Film ◽  
Quantum Well Intermixing

Low-energy ion-implantation-induced quantum-well intermixing

2002 ◽  
Vol 8 (4) ◽  
pp. 870-879 ◽  
Author(s):  
V. Aimez ◽  
J. Beauvais ◽  
J. Beerens ◽  
D. Morris ◽  
H.S. Lim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Low Energy ◽  
Quantum Well Intermixing

Chemical Effects in Ion Implantation Induced Quantum Well Intermixing

2000 ◽  
Vol 647 ◽  
Author(s):  
Todd W. Simpson ◽  
Paul G. Piva ◽  
Ian V. Mitchell
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Quantum Well Intermixing ◽  
Chemical Effects ◽  
M 31 ◽  
Shift Data ◽  
Fluence Dependence

AbstractIon implantation followed by rapid thermal annealing is used to induce layer intermixing and thus selectively blue-shift the emission wavelength of InP-based quantum well hetero- structures. The intermixing is greatly enhanced over thermal intermixing due to the supersaturation of defects. The magnitude of the observed blue-shift has been studied previously as a function of ion fluence and ion mass: the dependence on ion mass is well established, with heavier ions producing a larger shift. We show here that chemical effects can also play a significant role in determining the induced blue-shift. Data are presented from the implantation of the similar mass ions; aluminum (m~27), silicon (m~28) and phosphorus (m~31). The P- induced blue shift displays a monotonic increase with fluence, consistent with previous studies; however, the fluence dependence of Al- and Si-induced blue-shifts both deviate significantly from the behaviour for P. These results have important implications for attempts to scale intermixing behaviour with ion mass.

Laser Diode Integrated with a Dual-Waveguide Spot-Size Converter by Low-Energy Ion Implantation Quantum Well Intermixing

2005 ◽  
Vol 22 (7) ◽  
pp. 1684-1686 ◽  
Author(s):  
Hou Lian-Ping ◽  
Zhu Hong-Liang ◽  
Zhou Fan ◽  
Wang Lu-Feng ◽  
Bian Jing ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Laser Diode ◽  
Spot Size ◽  
Low Energy ◽  
Quantum Well Intermixing

Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with etching ion-implantation buffer layer

2015 ◽  
Vol 13 (8) ◽  
pp. 081301-81304 ◽  
Author(s):  
Liangshun Han Liangshun Han ◽  
Song Liang Song Liang ◽  
Hongliang Zhu Hongliang Zhu ◽  
Wei Wang Wei Wang
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Buffer Layer ◽  
Distributed Feedback ◽  
Distributed Feedback Laser ◽  
Quantum Well Intermixing

Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915 nm Semiconductor Laser Based on SiO2 Film

2018 ◽  
Vol 47 (3) ◽  
pp. 314003
Author(s):  
王鑫 WANG Xin ◽  
赵懿昊 ZHAO Yi-hao ◽  
朱凌妮 ZHU Ling-ni ◽  
侯继达 HOU Ji-da ◽  
马骁宇 MA Xiao-yu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Sio2 Film ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy
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