Thermal stability of electroless-nickel/solder interface: Part A. interfacial chemistry and microstructure

2000 ◽  
Vol 31 (11) ◽  
pp. 2857-2866 ◽  
Author(s):  
Pi Lin Liu ◽  
Zhengkui Xu ◽  
Jian Ku Shang
Keyword(s):  
Thermal Stability ◽  
Electroless Nickel ◽  
Interfacial Chemistry ◽  
Solder Interface ◽  
Thermal Stability Of

scholarly journals Influences of Bath Chemistry and Plating Variables on Characteristics of Electroless Ni–P Films on Si Wafers from Alkaline Citrate Solutions

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Naiming Miao ◽  
Jinjin Jiang ◽  
Wangping Wu
Keyword(s):  
Thermal Stability ◽  
Chemical Composition ◽  
Deposition Rate ◽  
Electroless Nickel ◽  
Monocrystalline Silicon ◽  
P Content ◽  
Almost All ◽  
P Type ◽  
Electroless Ni ◽  
Thermal Stability Of

Electroless nickel–phosphorus (Ni–P) films were produced on the surface of p-type monocrystalline silicon in the alkaline citrate solutions. The influences of bath chemistry and plating variables on the chemical composition, deposition rate, morphology, and thermal stability of electroless Ni–P films on silicon wafers were studied. The as-deposited Ni–P films were almost all medium- and high-P deposits. The concentrations of Ni2+ and citric ions influenced the deposition rate of the films but did not affect P content in the deposits. With increasing H2PO2− content, the P content and deposition rate were steadily increased. The pH and plating temperature had a significant effect on the chemical composition and the deposition rate of the films. The thermal stability of the medium-P film was better than that of the high-P deposit. At the same time, the proposed mechanism of Ni–P films on monocrystalline silicon substrates in the alkaline bath solution was discussed and addressed.

scholarly journals Electroless Plating – Its Applications in Resistor Technology

1976 ◽  
Vol 3 (2) ◽  
pp. 103-111 ◽  
Author(s):  
J. Dearden
Keyword(s):  
Thermal Stability ◽  
Tin Oxide ◽  
Electroless Nickel ◽  
Temperature Sensors ◽  
Metal Films ◽  
Temperature Coefficient Of Resistance ◽  
Distribution Requirement ◽  
Improved Performance ◽  
Mylar Sheet ◽  
Thermal Stability Of

Electroless processes for the deposition of metal films onto insulators have been known for many years. Various aspects of this technology have been applied in the field of resistor technology leading to improved performance of existing resistors and the evaluation of new resistors with novel characteristics.The applications of electroless nickel as a readily solderable, completely ohmic contact for tin oxide resistors is described.Copper oxide layers produced from oxidised electroless copper are shown to improve the thermal stability of tin oxide resistors.A range of electroless high precision metal film resistors from a fraction of an ohm to 100 kohm per square and from a few millimetres in length to over 1 metre is shown to be feasible. This technology has been applied to the manufacture of thin film circuits.The outstanding thermal stability of the electroless nickel-boron films and their temperature coefficient of resistance indicates a potential application in the field of temperature sensors.The ability to produce “weightless” films on Mylar sheet at 10 Gohm per square is considered to be a solution to the charge distribution requirement for electrostatic loudspeakers.

scholarly journals Thermal Stability of Electroless Nickel–Molybdenum–Phosphorus Alloy Films

1986 ◽  
Vol 59 (1) ◽  
pp. 133-137 ◽  
Author(s):  
Ichiro Koiwa ◽  
Masao Nishikawa ◽  
Keizo Yamada ◽  
Tetsuya Osaka
Keyword(s):  
Thermal Stability ◽  
Electroless Nickel ◽  
Alloy Films ◽  
Phosphorus Alloy ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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