The influence of indium tin oxide deposition on the transport properties at InP junctions

1993 ◽  
Vol 22 (10) ◽  
pp. 1311-1316 ◽  
Author(s):  
J. K. Luo ◽  
H. Thomas
Keyword(s):  
Transport Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Deposition

The impact of indium tin oxide deposition and post annealing on the passivation property of TOPCon solar cells

Solar Energy ◽  
2018 ◽  
Vol 176 ◽  
pp. 241-247 ◽  
Author(s):  
Ke Tao ◽  
Shuai Jiang ◽  
Rui Jia ◽  
Ying Zhou ◽  
Pengfei Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Post Annealing ◽  
Oxide Deposition ◽  
The Impact

Summary Abstract: p‐InP surface modification due to indium tin oxide deposition

1983 ◽  
Vol 1 (2) ◽  
pp. 618-619
Author(s):  
P. Sheldon ◽  
P. E. Russell ◽  
R. K. Ahrenkiel ◽  
R. E. Hayes
Keyword(s):  
Surface Modification ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Deposition ◽  
Inp Surface

scholarly journals Nanoscale morphology and electronic coupling at the interface between indium tin oxide and organic molecular materials

Nanoscale ◽  
2018 ◽  
Vol 10 (19) ◽  
pp. 9376-9385 ◽  
Author(s):  
Andrea Lorenzoni ◽  
Adriano Mosca Conte ◽  
Alessandro Pecchia ◽  
Francesco Mercuri
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Computational Approach ◽  
Electronic Coupling ◽  
Molecular Materials ◽  
Nanoscale Morphology ◽  
Injection Rates

An integrated computational approach, coupling nanoscale morphology to charge transport properties, allows to evaluate the distribution of injection rates at the electrode/organic interface in OLED materials.

Transport Properties of Indium Tin Oxide on Anisotropic Flexible Transparent Cellulosic Substrates

2002 ◽  
Vol 725 ◽  
Author(s):  
A. Amaral ◽  
C. Nunes de Carvalho ◽  
P. Brogueira ◽  
L. V. Melo ◽  
G. Lavareda ◽  
...  
Keyword(s):  
Transport Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Liquid Crystalline ◽  
Direct Consequence ◽  
Optical Microscope ◽  
Path Difference ◽  
Shear Direction ◽  
Current Path ◽  
Anisotropic Mechanical Properties

AbstractHydroxypropylcellulose (HPC) systems have been actively investigated as flexible transparent substrates for use in LCD technology. HPC solid films (20-60 μm) obtained from aqueous liquid crystalline solutions present tunable topography. The need for transparent contacts in working electronic devices leads to the study of the properties of Indium Tin Oxide (ITO) deposited on these flexible substrates. Substrates obtained from a 30% w/w solution of HPC in water (HPC30) were found to have an isotropic topography with a roughness (Ra ) of 18.4 nm as measured by atomic force microscopy (AFM). Substrates with an anisotropic topography were obtained from a 65% w/w HPC solution (HPC65). AFM measurements show a Ra = 29.1nm. Two types of peridiocities can be observed in HPC65 substrates. A primary set of large bands, perpendicular to the shear direction is characterized by a periodicity of 1.8-2.1 μm and an average peak-to-valley height of 74-87 nm. This first set of bands lies under a secondary set of smoother band texture with a periodicity of 0.35 – 0.40 μm and an average peak-to-valley height of 2.9-4.4 nm. Transport properties of ITO deposited on HPC30 substrates (ITO+HPC30) show a resistivity around 3x10-2 Ω.cm independent of orientation. ITO films deposited onto HPC65 substrates (ITO+HPC65) are conductive and show a resistivity which depends strongly on current direction about two orders of magnitude. The resistivity measured along the shearing direction is 3.8x10-2 Ω.cm and along a perpendicular direction is 2.7 Ω.cm. The anisotropic resistivity of ITO+HPC65 cannot be a direct consequence of the current path difference between both directions due to surface topography. The optical microscope observation of the ITO+HPC65 surface reveals the presence of cracks in the ITO film along the shear direction, which could be induced by the anisotropic mechanical properties of HPC65 substrates. The resistivity difference in ITO+HPC65 could be attributed to these cracks.

Temperature dependence of transport properties of evaporated indium tin oxide films

1987 ◽  
Vol 148 (1) ◽  
pp. 7-15 ◽  
Author(s):  
K.F. Huang ◽  
T.M. Uen ◽  
Y.S. Gou ◽  
C.R. Huang ◽  
H.C. Yang
Keyword(s):  
Temperature Dependence ◽  
Transport Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Tin Oxide Films

Transport properties of copper-doped indium oxide and indium tin oxide ceramics

1992 ◽  
Vol 130 (2) ◽  
pp. 407-414 ◽  
Author(s):  
S. J. Wen ◽  
G. Couturier ◽  
G. Campet ◽  
J. Portier ◽  
J. Claverie
Keyword(s):  
Transport Properties ◽  
Indium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Ceramics
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