Cu-doping in thermal treatment of some alkali halide single crystals

1962 ◽  
Vol 26 (6) ◽  
pp. 1153-1163 ◽  
Author(s):  
A. Levialdi ◽  
G. Spinolo
Keyword(s):  
Thermal Treatment ◽  
Single Crystals ◽  
Alkali Halide ◽  
Cu Doping

The Influence of Thermal Treatment on Elastic and Anelastic Properties of Ni55Fe18Ga27 Alloy Single Crystals

2019 ◽  
Vol 45 (3) ◽  
pp. 288-291
Author(s):  
K. V. Sapozhnikov ◽  
V. I. Nikolaev ◽  
V. M. Krymov ◽  
S. B. Kustov
Keyword(s):  
Thermal Treatment ◽  
Single Crystals

Latent hardening of doped alkali halide single crystals

1978 ◽  
Vol 46 (1) ◽  
pp. 107-115 ◽  
Author(s):  
R. Steinbrech ◽  
W. Skrotzki ◽  
P. Haasen
Keyword(s):  
Single Crystals ◽  
Alkali Halide ◽  
Latent Hardening

Growth of nearly perfect alkali halide single crystals by Czochralski method and their characterisation

1982 ◽  
Vol 56 (1) ◽  
pp. 125-131 ◽  
Author(s):  
Krishan Lal ◽  
R.V.Anantha Murthy ◽  
S.K. Halder ◽  
Bhanu Pratap Singh ◽  
Vijay Kumar
Keyword(s):  
Single Crystals ◽  
Alkali Halide ◽  
Czochralski Method

The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source

2006 ◽  
Vol 527-529 ◽  
pp. 55-58 ◽  
Author(s):  
Kwan Mo Kim ◽  
Soo Hyung Seo ◽  
Jae Woo Kim ◽  
Joon Suk Song ◽  
Myung Hwan Oh ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Single Crystals ◽  
Nitrogen Doping ◽  
Doping Concentration ◽  
Silicon Powder ◽  
Mixed Powder ◽  
Nitrogen Doped ◽  
Sublimation Method ◽  
Si Content ◽  
Si Addition

The variation of nitrogen doping concentration was systematically investigated with respect to the amount of silicon powder added to the SiC powder for growing n-type 6H-SiC single crystal by the sublimation method. To change intentionally the Si content in the SiC powder, 0wt% to 2wt% of a silicon powder was added to first-thermal treated SiC powder and the mixed powder was treated again at 1800oC for 3 hours to eliminate excess free-metallic silicon. Nitrogen doped 6H-SiC single crystals were grown by using 2nd-thermal treatment SiC powder at fixed N2/(Ar + N2) (3%). The nitrogen doping concentration of 6H-SiC crystals increased with increasing Si content in the SiC powder. In this work, we could identify that the additional silicon powder in SiC powder plays a role in the enhancement of nitrogen doping in 6H-SiC crystals grown by the sublimation method.

Latent Hardening of Doped Alkali Halide Single Crystals

1978 ◽  
pp. 107-116
Author(s):  
R. Steinbrech ◽  
W. Skrotzki ◽  
P. Haasen
Keyword(s):  
Single Crystals ◽  
Alkali Halide ◽  
Latent Hardening
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