Design and performance of compact low noise GaAs MESFET amplifiers for UHF operation

1986 ◽  
Vol 3 (2) ◽  
pp. 134-139
Author(s):  
Wang Wenqi ◽  
Yang Xinmin ◽  
Lu Zhuping ◽  
Zhu Wenyu
Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5287
Author(s):  
Hiwa Mahmoudi ◽  
Michael Hofbauer ◽  
Bernhard Goll ◽  
Horst Zimmermann

Being ready-to-detect over a certain portion of time makes the time-gated single-photon avalanche diode (SPAD) an attractive candidate for low-noise photon-counting applications. A careful SPAD noise and performance characterization, however, is critical to avoid time-consuming experimental optimization and redesign iterations for such applications. Here, we present an extensive empirical study of the breakdown voltage, as well as the dark-count and afterpulsing noise mechanisms for a fully integrated time-gated SPAD detector in 0.35-μm CMOS based on experimental data acquired in a dark condition. An “effective” SPAD breakdown voltage is introduced to enable efficient characterization and modeling of the dark-count and afterpulsing probabilities with respect to the excess bias voltage and the gating duration time. The presented breakdown and noise models will allow for accurate modeling and optimization of SPAD-based detector designs, where the SPAD noise can impose severe trade-offs with speed and sensitivity as is shown via an example.


Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 786 ◽  
Author(s):  
Massimiliano Rossi ◽  
Riccardo Liberati ◽  
Marco Frasca ◽  
John Richardson

It is quite common for transceivers to operate with the RF receiver and transmitter working on different time slots. Typical applications are radars and transceivers in the field of communications. Generally, the receiver is turned off when the transmitter broadcasts and vice versa. This is done in order to prevent the transmitter from blinding the receiver or causing the RF low noise amplification (LNA) stage to saturate. When keeping a receiver active, some leakage of RF energy is inevitable, and therefore shielding is applied to mitigate spurious signals. However, there are many applications wherein the receiver cannot be turned off. To address these applications, we investigate the design and performance of a fully-analog self-jamming canceller able to operate in UHF (Ultra High Frequency) RFID devices. While the traditional cost to design and build this type of topology can be quite high, our proposal is based on a low-cost physical approach. In addition to using common SMT (Surface Mount Technology) devices, we leveraged a new piece of modular technology offered by X-Microwave which allows designers to easily produce RF solutions with a broad portfolio of modular system drop-in blocks. A prototype was realized and the measured results are in close agreement with theoretical simulations. Significant damping of the leaked signal in the receiving channel was realized.


Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1222 ◽  
Author(s):  
Longhi ◽  
Pace ◽  
Colangeli ◽  
Ciccognani ◽  
Limiti

An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targeted applications and corresponding systems. Advanced technologies are presented highlighting potentials and drawbacks related to the considered possibilities. Design techniques, applicable to different requirements, are presented and analyzed. An LNA operating at V-band (59–66 GHz) is designed and tested following the presented guidelines, demonstrating state-of-the-art results in terms of noise figure (average NF < 2 dB). A state-of-the-art table, reporting recent results available in open literature on this topic, is provided and examined, focusing on room temperature operation and performance in cryogenic environment. Finally, trends versus frequency and perspectives are outlined.


Author(s):  
T. Sawai ◽  
M. Nishida ◽  
T. Hirai ◽  
K. Honda ◽  
T. Yamaguchi ◽  
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Keyword(s):  

1984 ◽  
Vol 5 (3) ◽  
pp. 85-87 ◽  
Author(s):  
M. Feng ◽  
V.K. Eu ◽  
C.M.L. Yee ◽  
T. Zielinski

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