Microwave power dependence in Gd 123 and Tl 2212 thin films: Examining the evidence for limiting behavior

1997 ◽  
Vol 10 (2) ◽  
pp. 85-90 ◽  
Author(s):  
L. F. Cohen ◽  
A. Cowie ◽  
J. C. Gallop ◽  
I. S. Ghosh ◽  
I. N. Goncharov
Keyword(s):  
Thin Films ◽  
Microwave Power ◽  
Power Dependence ◽  
Limiting Behavior

Investigation Into Microwave Power Dependence of High Quality Tl-1223 Thin Films on LSAT Substrate

2005 ◽  
Vol 15 (2) ◽  
pp. 3596-3599
Author(s):  
M.V. Jacob ◽  
A. Sundaresan ◽  
J. Mazierska ◽  
Y. Tanaka
Keyword(s):  
Thin Films ◽  
Microwave Power ◽  
Power Dependence ◽  
High Quality

scholarly journals Microwave-power Dependence of Inverse Spin-Hall Effect Induced by Spin Pumping in Ni81Fe19/Au Thin Films

Hyomen Kagaku ◽  
2009 ◽  
Vol 30 (12) ◽  
pp. 688-693 ◽  
Author(s):  
Kazuya HARII ◽  
Kazuya ANDO ◽  
Ken-ichi UCHIDA ◽  
Hiroyasu NAKAYAMA ◽  
Yusuke KAJIWARA ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Microwave Power ◽  
Spin Hall Effect ◽  
Power Dependence ◽  
Spin Pumping ◽  
Inverse Spin Hall Effect ◽  
Au Thin Films

Microwave power dependence of YBa2Cu3O7 thin‐film Josephson edge junctions

1996 ◽  
Vol 68 (5) ◽  
pp. 705-707 ◽  
Author(s):  
D. E. Oates ◽  
P. P. Nguyen ◽  
Y. Habib ◽  
G. Dresselhaus ◽  
M. S. Dresselhaus ◽  
...  
Keyword(s):  
Thin Film ◽  
Microwave Power ◽  
Power Dependence

ANOMALOUS BEHAVIORS OF NON-RESONANT MICROWAVE ABSORPTIONS OF SUPERCONDUCTORS

2000 ◽  
Vol 14 (16) ◽  
pp. 1633-1650
Author(s):  
K. SUGAWARA ◽  
N. ARAI ◽  
A. KOUZUKI ◽  
S. ICHIMURA ◽  
H. NAOI ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Applied Magnetic Field ◽  
Microwave Power ◽  
Superconducting Thin Films ◽  
Modulation Amplitude ◽  
Directional Effect ◽  
System A ◽  
Powder Samples ◽  
Preliminary Study

The non-resonant microwave absorption (NRMA) measurements have been intensively performed for superconducting thin films of YBa 2 Cu 3 O y fabricated on MgO (100) substrates and powder samples of LaSrCuO systems. In order to complement the study, we also review the NRMA of BiSrCaCuO system. A particular attention has been paid to the following phenomena: (i) phases, (ii) effect of current, (iii) directional effect of applied magnetic field, (iv) hysteresis, (v) microwave power absorbed as a function of magnetic field, (vi) linewidth in the vicinity of T c , and (vii) modulation amplitude effect. A preliminary study on ( La 0.98 Dy 0.02)1.85 Sr 0.15 CuO 4 was also reported.

BAND GAP SHIFT DUE TO NITROGEN DOPING, COMPOSITION GAS PRESSURE AND MICROWAVE POWER OF a-C:N THIN FILMS GROWN BY NEWLY-DEVELOPED SURFACE WAVE MICROWAVE PLASMA CVD

2004 ◽  
Vol 11 (06) ◽  
pp. 559-562
Author(s):  
M. RUSOP ◽  
S. ADHIKARI ◽  
A. M. M. OMER ◽  
S. ADHIKARY ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Wave ◽  
Film Thickness ◽  
Band Gap ◽  
Microwave Power ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Microwave Plasma ◽  
Gas Pressure ◽  
Developed Surface

This paper reports the band gap shifting due to nitrogen ( N 2) doping, microwave power and composition gas pressure of nitrogenated amorphous carbon ( a - C : N ) thin films deposited by newly-developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD). Results show that the optical band gap decreased from 4.1 eV to 2.4 eV corresponding to the increase of N 2 doping from 0 to 5% in the gas ratio. However, further increase of N 2 doping beyond 5% did not decrease the band gap. It was found that composition gas pressure and launched MW power during film deposition also largely control the optical band gap. Investigation of annealing effects on optical band gap and film thickness of the N 2 doped films revealed that both band gap and film thickness decrease significantly with increase of annealing temperature. The optical band gap decreased from 2.4 eV to 1.1 eV, while film thickness decreases from 320 nm to 50 nm corresponding to 200 to 400°C annealing temperature. The results revealed that the properties of a - C : N can be tuned by changing the annealing temperature, composition gas pressure and microwave power of the SWMP-CVD system.

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