Secondary recrystallization in thin films of FCC metals under pulsed laser irradiation

2000 ◽  
Vol 36 (7) ◽  
pp. 685-687 ◽  
Author(s):  
M. I. Markevich
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Secondary Recrystallization ◽  
Pulsed Laser ◽  
Fcc Metals ◽  
Pulsed Laser Irradiation

PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Nickel Thin Films ◽  
Pulsed Laser Irradiation

Short pulsed laser irradiation of amorphous germanium thin films

1982 ◽  
Vol 97 (1) ◽  
pp. 1-7 ◽  
Author(s):  
R.K. Sharma ◽  
S.K. Bansal ◽  
R. Nath ◽  
G.P. Srivastava
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Amorphous Germanium ◽  
Pulsed Laser Irradiation

Crystallization of silicon carbide thin films by pulsed laser irradiation

1996 ◽  
Vol 106 ◽  
pp. 193-197 ◽  
Author(s):  
G. De Cesare ◽  
S. La Monica ◽  
G. Maiello ◽  
G. Masini ◽  
E. Proverbio ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

Phototransformation of C60 Thin Films by UV Pulsed Laser Irradiation: Comparative Photoacoustic, AFM, and Raman Studies

2007 ◽  
Vol 7 (4) ◽  
pp. 1414-1418 ◽  
Author(s):  
E. Alvarez-Zauco ◽  
E. V. Basiuk ◽  
R. Castañeda-Guzmán ◽  
R. Y. Sato-Berrú ◽  
J. M. Saniger-Blesa ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

Micro-Raman characterization of WO3 and MoO3 thin films obtained by pulsed laser irradiation

1998 ◽  
Vol 127-129 ◽  
pp. 674-678 ◽  
Author(s):  
E Haro-Poniatowski ◽  
M Jouanne ◽  
J.F Morhange ◽  
C Julien ◽  
R Diamant ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Raman Characterization ◽  
Pulsed Laser Irradiation

scholarly journals Estimation of Local Crystallization of a-Si:H Thin Films by Nanosecond Pulsed Laser Irradiation Through Local Temperature Simulation

2012 ◽  
Vol 39 ◽  
pp. 286-294 ◽  
Author(s):  
O. García ◽  
J.J. García-Ballesteros ◽  
D. Munoz-Martin ◽  
S. Núñez-Sánchez ◽  
M. Morales ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Local Temperature ◽  
Nanosecond Pulsed Laser ◽  
Pulsed Laser Irradiation

Characteristics of phase transitions in inhomogeneous silicon monoxide/chromium thin films exposed to pulsed laser irradiation

1999 ◽  
Vol 25 (2) ◽  
pp. 131-133
Author(s):  
P. E. Shepelyavyi ◽  
V. P. Kunets ◽  
E. V. Mikhailovskaya ◽  
I. Z. Indutnyi
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Silicon Monoxide ◽  
Pulsed Laser Irradiation

Influence of the substrate on the temperature induced by pulsed laser irradiation of thin films

1990 ◽  
Vol 46 (1-4) ◽  
pp. 375-377 ◽  
Author(s):  
A. Jadin ◽  
I.V. Filiouguine ◽  
M. Wautelet ◽  
L.D. Laude
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

scholarly journals Picosecond Photovoltaic Response in Tilted Lanthanum Doped Manganite Films

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Zhiqing Lu ◽  
Hao Ni ◽  
Jianfeng Xi ◽  
Xiaoming Li ◽  
Kun Zhao
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Rise Time ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Full Width ◽  
Half Maximum ◽  
Photovoltaic Response ◽  
External Bias ◽  
Pulsed Laser Irradiation

Anisotropic picosecond photovoltaic responses were observed in lanthanum doped manganiteLaxCa1-xMnO3(x=0.67and 0.4) thin films, which were deposited on miscut LaSrAlO4substrates under ultraviolet pulsed laser irradiation without external bias. The 10%–90% rise time and the full width at half maximum of La0.67Ca0.33MnO3were 470 and 585 ps, respectively, and those of La0.4Ca0.6MnO3were 220 and 515 ps. The photovoltage sensitivities of La0.67Ca0.33MnO3and La0.4Ca0.6MnO3, which are sensitive to the concentrations of lanthanum of the samples, are 0.28 V/mJ and 3.47 V/mJ, respectively. The photosensitivity in the films deposited on MgO is higher than that in those deposited on LaSrAlO4substrates, for it has a big lattice mismatch. These results should open a route for the application of lanthanum doped manganite as an ultrafast photodetector material.

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