scholarly journals Critical exponent of the electrical conductivity in the paracoherence region of a thin film of YBa2Cu3O7−x

1994 ◽  
Vol 17 (6) ◽  
pp. 585-594 ◽  
Author(s):  
Manmeet K Marhas ◽  
K Balakrishnan ◽  
V Ganesan ◽  
R Srinivasan ◽  
D Kanjilal ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Critical Exponent

Electrical Conductivity Manipulation and Switching Phenomena of Poly(p-Phenylenebenzobisthiazole) Thin Film by Doping Process

2010 ◽  
Author(s):  
Jiahua Zhu ◽  
Thomas C. Ho ◽  
Zhanhu Guo ◽  
Suying Wei ◽  
Sung Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity

Molecularly Mediated Thin Film Assembly of Nanoparticles on Flexible Devices: Electrical Conductivity versus Device Strains in Different Gas/Vapor Environment

ACS Nano ◽  
2011 ◽  
Vol 5 (8) ◽  
pp. 6516-6526 ◽  
Author(s):  
Jun Yin ◽  
Peipei Hu ◽  
Jin Luo ◽  
Lingyan Wang ◽  
Melissa F. Cohen ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Flexible Devices ◽  
Film Assembly

Development of High-Efficiency Zn2SiO4:Mn Thin Films for Flat Panel Cathodoluminescent Displays

1997 ◽  
Vol 471 ◽  
Author(s):  
J. Liu ◽  
D. C. Morton ◽  
M. R. Miller ◽  
Y. Li ◽  
E. W. Forsythe ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Response Time ◽  
Decay Time ◽  
High Efficiency ◽  
Fast Response ◽  
Flat Panel ◽  
Powder Phosphor ◽  
Fast Response Time

ABSTRACTZn2SiO4:Mn thin films were deposited and studied as thin film phosphors for flat panel cathodoluminescent displays. Crystallized films with improved electrical conductivity were obtained after conventional and rapid thermal annealings in a N2 environment at 850Xy11100 °C for 0.25 to 60 minutes. A maximum cathodoluminescent efficiency of 1.3 Lm/W was achieved under dc excitation at 1500 volts. The luminescent emission from these thin films was peaked around 525 nm. The decay time of these films was controlled in the range of 2 to 10 ms by varying the deposition and annealing parameters. The fast response time of these thin films overcomes the long decay limitation of the Zn2SiO4:Mn powder phosphor in practical display applications.

scholarly journals Band Gap Shift and Electrical Conductivity of (Ag-xSnO2)NPs-β-Carotene Thin Film

2018 ◽  
Vol 1093 ◽  
pp. 012032 ◽  
Author(s):  
Ulwiyatus Sa’adah ◽  
Arif Hidayat ◽  
Solehudin ◽  
Sujito ◽  
Nandang Mufti ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Β Carotene

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity

Nano Letters ◽  
2019 ◽  
Vol 20 (2) ◽  
pp. 1047-1053
Author(s):  
Tingting Yao ◽  
Yixiao Jiang ◽  
Chunlin Chen ◽  
Xuexi Yan ◽  
Ang Tao ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Oxide Thin Film ◽  
Out Of Plane ◽  
Ferroelectric Oxide

scholarly journals Sodium hydroxide and vacuum annealing modifications of the surface terminations of a Ti3C2(MXene) epitaxial thin film

RSC Advances ◽  
2018 ◽  
Vol 8 (64) ◽  
pp. 36785-36790 ◽  
Author(s):  
Joseph Halim ◽  
Ingemar Persson ◽  
Per Eklund ◽  
Per O. Å. Persson ◽  
Johanna Rosen
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Sodium Hydroxide ◽  
Vacuum Annealing ◽  
Epitaxial Thin Film ◽  
Naoh Treatment

Ti3C2Tx(MXene) thin film shows elimination of –F and domination of –O surface terminations after NaOH treatment followed by annealing while preserving the electrical conductivity of the film.

Enhanced electrical conductivity of transparent electrode using metal microfiber networks for gridless thin-film solar cells

2019 ◽  
Vol 200 ◽  
pp. 109998 ◽  
Author(s):  
Dae-Hyung Cho ◽  
Hong Seok Jo ◽  
Woo-Jung Lee ◽  
Tae-Gun Kim ◽  
Byungha Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Solar Cells ◽  
Transparent Electrode ◽  
Thin Film Solar Cells

Design and Fabrication of Micro Oxygen Sensor

2011 ◽  
Vol 483 ◽  
pp. 237-242
Author(s):  
Chia Yen Lee ◽  
Long Kai Lin Liou ◽  
Chin Lung Chang ◽  
Chang Hsing Tai ◽  
Lung Ming Fu
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Gas Sensor ◽  
Oxygen Sensor ◽  
Rf Sputtering ◽  
Experimental Results ◽  
Surface Pattern ◽  
Working Temperature ◽  
Measured Resistance ◽  
Sensing Performance

In the study, a MEMS-based gas sensor is presented, which consists of a sensing thin film deposited by RF sputtering and annealed at 375°C. The structure and surface pattern of the thin film are analyzed by XRD and SEM. The sensor consists of a substrate, Pt interdigitated electrodes and an SnO2 sensing layer. As concentration of oxygen changes, a change in the electrical conductivity of the SnO2 film is caused. The experimental results show that the measured resistance increases as the concentration of oxygen increases at a working temperature of 300°C. A good oxygen sensing performance is presented in the study.

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