Size effect of indium antimonide at room temperature

1973 ◽  
Vol 16 (1) ◽  
pp. 188-202 ◽  
Author(s):  
Yu-Tung Yang ◽  
Hong-Tzer Ho ◽  
Cheng-Chih Pei ◽  
Shung-Chen Yang ◽  
Biao-Shian Yu
Keyword(s):  
Size Effect ◽  
Indium Antimonide ◽  
Room Temperature

Time to Failure Size Effect for Tensile Creep Specimens

2014 ◽  
Vol 627 ◽  
pp. 185-188 ◽  
Author(s):  
Krzysztof Nowak
Keyword(s):  
Size Effect ◽  
Cross Section ◽  
Material Properties ◽  
Room Temperature ◽  
Creep Condition ◽  
Specimen Size ◽  
Tensile Creep ◽  
Time To Failure ◽  
Tension Specimen ◽  
Series Of Experiments

Size effect for tension specimen in creep condition is not very well recognised phenomenon. The Weibull’s works on influence of nonhomogeneity of material properties on its strength suggest that such effect should take place also for creep. The most of authors regard that the stress redistribution occurring during creep considerably reduces size effect. To examine it the author performed a series of experiments for thin tin alloy wires creeping in room temperature as well as some numerical simulations. The results confirmed the existence of size effect for time to failure. The numerical analysis was made for time of first macroscopic damage occurrencet1and for time of cross-section failuret2. Both these parameters show the influence of specimen size according to size effect law, but the dependence of parametert1was more pronounced.

Thermoelectric Figure of Merit Calculations for Nanowires –The Moderate Confinement Regime

2010 ◽  
Vol 1267 ◽  
Author(s):  
Jane Cornett ◽  
Oded Rabin
Keyword(s):  
Indium Antimonide ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Wire Radius ◽  
Thermoelectric Figure ◽  
High Level ◽  
Case Basis ◽  
Strong Confinement

AbstractWe report room temperature ZT calculations for silicon and indium antimonide nanowires of varying radii. Interestingly, some systems deviate significantly from the anticipated trend of ZT vs. radius. The InSb results are particularly remarkable due to the non-monotonic relationship seen between n-type ZT and wire radius; where typically we expect to see only a decrease with increasing radius, for InSb ZT increases between 20 and 100 nm wire radii. This is thought to be due to the high level of degeneracy of subbands for larger nanowire radii. These results indicate that the monotonic relationship between ZT and wire radius observed under strong confinement conditions cannot be assumed, but must be tested on a case-by-case basis for each materials system.

SIZE EFFECT OF FLOW STRESS IN ISOTHERMAL UPSETTING DEFORMATION

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1745-1750
Author(s):  
BIN GUO ◽  
CHUNJU WANG ◽  
DEBIN SHAN ◽  
LINING SUN
Keyword(s):  
Grain Size ◽  
Flow Stress ◽  
Size Effect ◽  
Room Temperature ◽  
Size Dependence ◽  
Treatment Process ◽  
Different Dimensions ◽  
Single Grain ◽  
The Difference ◽  
Different Grain Size

With the miniaturization of parts, size effect occurs. The isothermal forming processes are performed to obtain homogenizing deformation. In the paper, a serial of isothermal upsetting tests are carried out with billets of different dimensions. Difference of flow stress is accepted as the parameter to evaluate the size dependence of flow stress on billets dimensions. The experimental results show that size effect occurs clearly. With the increasing of temperature, the difference of flow stress becomes smaller, which means that the degree of size dependence is reduced. Scatter of flow stress is observed in the tests at room temperature. When the deformation temperature is raised, the fluctuation of flow stress tends towards decreasing. In order to investigate the effect of grain size, different grain size is obtained with the heat treatment process. At the same temperature, the difference of flow stress increases with the increasing of grain size. These phenomena can be explained from the viewpoint of polycrystalline structure of material. The anisotropy of individual grain is appeared obviously, which leads the fluctuation of flow stress. In the isothermal deformation, the effect of single grain is smaller than that at room temperature.

MAGNETORESISTANCE AND HALL EFFECT IN ORIENTED SINGLE CRYSTAL SAMPLES OF n-TYPE INDIUM ANTIMONIDE

1961 ◽  
Vol 39 (3) ◽  
pp. 452-467 ◽  
Author(s):  
C. H. Champness
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Single Crystal ◽  
Hall Effect ◽  
Air Temperature ◽  
Indium Antimonide ◽  
Room Temperature ◽  
Magneto Resistance ◽  
Longitudinal Magnetoresistance ◽  
Oriented Single Crystal

Measurements have been made on the angular dependence of the magneto-resistance effect and the Hall effect on oriented n-type indium antimonide samples. The measurements were taken at room temperature and liquid air temperature using a magnetic field strength of about 5000 gauss. Besides evidence of inhomogeneity, the results show directional dependence of the longitudinal magnetoresistance. The largest value was found in the [Formula: see text] direction. This can be explained if, in addition to electrons at the central minimum, there is some filling of the [Formula: see text] minima in k space.

Grain Size Effect on Room Temperature Fatigue and Creep-Fatigue Behavior of OFHC Copper

2007 ◽  
Vol 52 (3) ◽  
pp. 521-525 ◽  
Author(s):  
Xiao Pan ◽  
Xianglin Wu ◽  
Geng Fu ◽  
James F. Stubbins
Keyword(s):  
Grain Size ◽  
Size Effect ◽  
Room Temperature ◽  
Fatigue Behavior ◽  
Ofhc Copper ◽  
Grain Size Effect ◽  
Creep Fatigue
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