scholarly journals X-ray topographic analysis of dislocation line defectsin calcium fluoride crystals

1982 ◽  
Vol 4 (4) ◽  
pp. 443-454
Author(s):  
C C Desai
Keyword(s):  
Calcium Fluoride ◽  
Dislocation Line ◽  
Topographic Analysis ◽  
X Ray ◽  
Fluoride Crystals

Dielectric spectra of doped and X-ray irradiated calcium fluoride crystals

2007 ◽  
Vol 4 (3) ◽  
pp. 1234-1237 ◽  
Author(s):  
I. Nicoara ◽  
M. Munteanu ◽  
N. Pecingina-Garjoaba ◽  
M. Stef ◽  
E. Preda ◽  
...  
Keyword(s):  
Calcium Fluoride ◽  
Dielectric Spectra ◽  
X Ray ◽  
Fluoride Crystals

X-Ray Study of Anharmonic Vibrations in Calcium Fluoride

1972 ◽  
Vol 5 (6) ◽  
pp. 2337-2343 ◽  
Author(s):  
H. B. Strock ◽  
B. W. Batterman
Keyword(s):  
Calcium Fluoride ◽  
X Ray ◽  
Anharmonic Vibrations

scholarly journals Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction

2015 ◽  
Vol 48 (3) ◽  
pp. 655-665 ◽  
Author(s):  
Andrei Benediktovitch ◽  
Alexei Zhylik ◽  
Tatjana Ulyanenkova ◽  
Maksym Myronov ◽  
Alex Ulyanenkov
Keyword(s):  
Dislocation Line ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Silicon And Germanium

Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silicon and germanium, the growth of such systems is challenged by nucleation and propagation of threading and misfit dislocations that degrade the electrical properties. To analyze the dislocation microstructure of Ge films on Si(011) and Si(111), a set of reciprocal space maps and profiles measured in noncoplanar geometry was collected. To process the data, the approach proposed by Kaganer, Köhler, Schmidbauer, Opitz & Jenichen [Phys. Rev. B, (1997),55, 1793–1810] has been generalized to an arbitrary surface orientation, arbitrary dislocation line direction and noncoplanar measurement scheme.

On Low Voltage Scanning Electron Microscopy and Chemical Microanalysis

2000 ◽  
Vol 6 (4) ◽  
pp. 307-316 ◽  
Author(s):  
E.D. Boyes
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
Low Voltage ◽  
Energy Dispersive ◽  
Beam Specimen ◽  
Topographic Analysis ◽  
X Ray ◽  
Voltage Scanning ◽  
Scanning Electron

AbstractThe current status and general applicability of scanning electron microscopy (SEM) at low voltages is reviewed for both imaging (low voltage scanning electron microscopy, LVSEM) and chemical microanalysis (low voltage energy-dispersive X-ray spectrometry, LVEDX). With improved instrument performance low beam energies continue to have the expected advantages for the secondary electron imaging of low atomic number (Z) and electrically non-conducting samples. They also provide general improvements in the veracity of surface topographic analysis with conducting samples of all Z and at both low and high magnifications. In new experiments the backscattered electron (BSE) signal retains monotonic Z dependence to low voltages (<1 kV). This is contrary to long standing results in the prior literature and opens up fast chemical mapping with low dose and very high (nm-scale) spatial resolution. Similarly, energy-dispersive X-ray chemical microanalysis of bulk samples is extended to submicron, and in some cases to <0.1 μm, spatial resolution in three dimensions at voltages <5 kV. In favorable cases, such as the analysis of carbon overlayers at 1.5 kV, the thickness sensitivity for surface layers is extended to <2 nm, but the integrity of the sample surface is then of concern. At low beam energies (E0) the penetration range into the sample, and hence the X-ray escape path length out of it, is systematically restricted (R = F(E05/3)), with advantages for the accuracy or elimination of complex analysis-by-analysis matrix corrections for absorption (A) and fluorescence (F). The Z terms become more sensitive to E0 but they require only one-time calibrations for each element. The new approach is to make the physics of the beam–specimen interactions the primary factor and to design enabling instrumentation accordingly.

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