Stark effect and four-quantum transitions in three-dimensional fields in a plasma

1977 ◽  
Vol 41 (2) ◽  
pp. 334-344 ◽  
Author(s):  
S. H. Kim
Keyword(s):  
Stark Effect ◽  
Three Dimensional ◽  
Quantum Transitions

scholarly journals Metastable One-Electron Excited States of Charged Fullerenes

2019 ◽  
Vol 2019 ◽  
pp. 1-4
Author(s):  
Rafael V. Arutyunyan ◽  
Alexander D. Vasiliev ◽  
Yuri N. Obukhov ◽  
Alexander V. Osadchy
Keyword(s):  
Density Functional ◽  
Dipole Moments ◽  
Three Dimensional ◽  
Density Functional Theory Method ◽  
Transition Dipole ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Transition Dipole Moments ◽  
Quantum Transitions ◽  
Wavelength Radiation

We study the spontaneous emission processes for the quantum transitions between electron states of a charged C60 fullerene. Lifetimes for the transitions between the volume-localized electron levels and the surface-localized electron levels are evaluated and compared with the transitions between two surface-localized electron levels. We find the lifetimes by computing the transition dipole moments on the basis of the numeric calculations of the three-dimensional electron wave functions of a charged fullerene by making use of the density functional theory method implemented in the QuantumEspresso package. We show that the lifetime of a volume-localized level is of order of 1 μs for a transition energy of about 5 eV. This suggests to consider the possibility of using charged fullerenes for generating short-wavelength radiation, including coherent radiation in this range.

A Three-Dimensional Method of Representing Quantum Transitions in Band Spectra

1925 ◽  
Vol 62 ◽  
pp. 61
Author(s):  
Harvey B. Lemon ◽  
Charles M. Blackburn
Keyword(s):  
Three Dimensional ◽  
Quantum Transitions ◽  
Band Spectra

Three-Dimensional Distribution Measurement of Electric Fields using Stark Effect in NaK

1996 ◽  
Vol 35 (Part 1, No. 4A) ◽  
pp. 2334-2338 ◽  
Author(s):  
Yoshitaka Takahashi ◽  
Toshihiko Yoshino ◽  
Kazuya Kawasaki
Keyword(s):  
Electric Fields ◽  
Stark Effect ◽  
Three Dimensional ◽  
Distribution Measurement ◽  
Dimensional Distribution

Localized Excitons in InGaN

1997 ◽  
Vol 482 ◽  
Author(s):  
S. ChichiBu ◽  
T. Deguchi ◽  
T. Sota ◽  
K. Wada ◽  
S. Nakamura
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Driving Forces ◽  
Multiple Quantum Well ◽  
Molar Fraction ◽  
Three Dimensional ◽  
Multiple Quantum ◽  
Single Quantum Well ◽  
Potential Fluctuation ◽  
Localized Excitons

AbstractEmission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional (3D) InGaN materials grown on sapphire substrates without any epitaxial lateral overgrown GaN (ELOG) base layers were investigated. The InxGx1−xN layers showed various degree of spatial potential (bandgap) fluctuation, which is probably due to a compositional inhomogeneity or monolayer thickness fluctuation produced by some kinetic driving forces initiated by the threading dislocations (TDs) or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x=0.2, which changes to nearly 8–10 % for the strained InxGa1−xN. This potential fluctuation induces energy tail states both in QW and 3D InGaN, showing a large Stokes-like shift combined with the red shift due to quantum confined Stark effect (QCSE) induced by the piezoelectric field. The spontaneous emission from undoped InGaN single quantum well (SQW) light-emitting diodes (LED's), undoped 3D double heterostructure (DH) LED's, and multiple quantum well (MQW) laser diode (LD) wafers was assigned as being due to the recombination of excitons localized at the potential minima, whose area was determined by cathodoluminescence (CL) mapping to vary from less than 60 nm to 300 nm in lateral size in the case of QW's. The lasing mechanisms of the cw In0.15Gao.85N MQW LD's having small potential fluctuation, whose bandgap broadenings are less than about 50 meV, can be described by the well-known electron-hole-plasma (EIHP) picture with Coulomb enhancement. The inhomogenous MQW LD's are considered to lase by EHP in segmented QW's or Q-disks. It is desirable to use entire QW planes with small potential inhomogeneity as gain media for higher performance LD operation.

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