Surface chemical structures of CoO x /TiO2 catalysts for continuous wet trichloroethylene oxidation

2005 ◽  
Vol 22 (6) ◽  
pp. 839-843 ◽  
Author(s):  
Moon Hyeon Kim
Keyword(s):  
Surface Chemical ◽  
Chemical Structures

scholarly journals Controlling Localization and Excretion of Nanoparticles by Click Modification of the Surface Chemical Structures inside Living Cells

ChemPlusChem ◽  
2015 ◽  
Vol 80 (5) ◽  
pp. 772-772
Author(s):  
Takeo Ito ◽  
Takuma Nakamura ◽  
Eriko Kusaka ◽  
Ryohsuke Kurihara ◽  
Kazuhito Tanabe
Keyword(s):  
Living Cells ◽  
Surface Chemical ◽  
Chemical Structures ◽  
Modification Of The Surface

scholarly journals Controlling Localization and Excretion of Nanoparticles by Click Modification of the Surface Chemical Structures inside Living Cells

ChemPlusChem ◽  
2015 ◽  
Vol 80 (5) ◽  
pp. 796-799
Author(s):  
Takeo Ito ◽  
Takuma Nakamura ◽  
Eriko Kusaka ◽  
Ryohsuke Kurihara ◽  
Kazuhito Tanabe
Keyword(s):  
Living Cells ◽  
Surface Chemical ◽  
Chemical Structures ◽  
Modification Of The Surface

Surface chemical structures of vanadium pentoxide-phosphorus pentoxide catalysts

1988 ◽  
Vol 92 (8) ◽  
pp. 2275-2282 ◽  
Author(s):  
Atsushi Satsuma ◽  
Atsushi Hattori ◽  
Akio Furuta ◽  
Akira Miyamoto ◽  
Tadashi Hattori ◽  
...  
Keyword(s):  
Vanadium Pentoxide ◽  
Phosphorus Pentoxide ◽  
Surface Chemical ◽  
Chemical Structures

Correlation of pretilt angles and surface chemical structures of polyimide alignment films after direct fluorination

2010 ◽  
Vol 59 (12) ◽  
pp. 1622-1629 ◽  
Author(s):  
Xu Wang ◽  
Shengliang Chen ◽  
Yijun Yang ◽  
Yi Chen ◽  
Ming Li ◽  
...  
Keyword(s):  
Surface Chemical ◽  
Chemical Structures ◽  
Direct Fluorination ◽  
Pretilt Angles

Modulation of Surface Charge by Mediating Surface Chemical Structures in Nonpolar Solvents with Nonionic Surfactant Used as Charge Additives

2021 ◽  
Vol 125 (35) ◽  
pp. 19525-19536
Author(s):  
Zhixiang Chen ◽  
Yi Lu ◽  
Mahsa Nazemi Ashani ◽  
Rogerio Manica ◽  
Liyuan Feng ◽  
...  
Keyword(s):  
Surface Charge ◽  
Nonionic Surfactant ◽  
Surface Chemical ◽  
Chemical Structures ◽  
Nonpolar Solvents

ChemInform Abstract: Surface Chemical Structures of V2O5-P2O5 Catalysts

ChemInform ◽  
1988 ◽  
Vol 19 (28) ◽  
Author(s):  
A. SATSUMA ◽  
A. HATTORI ◽  
A. FURUTA ◽  
A. MIYAMOTO ◽  
T. HATTORI ◽  
...  
Keyword(s):  
Surface Chemical ◽  
Chemical Structures

Analytical Electron Microscopy of Ion-Implanted Metals

1985 ◽  
Vol 43 ◽  
pp. 282-285
Author(s):  
D.I. Potter ◽  
M. Ahmed ◽  
K. Ruffing
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Friction And Wear ◽  
Analytical Electron Microscopy ◽  
Chemical Compositions ◽  
Surface Chemical ◽  
Near Surface ◽  
The Past ◽  
Analytical Electron ◽  
Property Changes

Ion implantation, used extensively for the past decade in fabricating semiconductor devices, now provides a unique means for altering the near-surface chemical compositions and microstructures of metals. These alterations often significantly improve physical properties that depend on the surface of the material; for example, catalysis, corrosion, oxidation, hardness, friction and wear. Frequently the mechanisms causing these beneficial alterations and property changes remain obscure and much of the current research in the area of ion implantation metallurgy is aimed at identifying such mechanisms. Investigators thus confront two immediate questions: To what extent is the chemical composition changed by implantation? What is the resulting microstructure? These two questions can be investigated very fruitfully with analytical electron microscopy (AEM), as described below.

Chemical structure of diamond-like carbon thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 710-711
Author(s):  
N.-H. Cho ◽  
K.M. Krishnan ◽  
D.B. Bogy
Keyword(s):  
Electrical Resistivity ◽  
Chemical Structure ◽  
Diamond Like Carbon ◽  
Chemical Structures ◽  
Sputtering Power ◽  
Data Aquisition ◽  
Equilibrium Phases ◽  
Electron Energy Loss ◽  
Power Densities ◽  
Preparation Techniques

Diamond-like carbon (DLC) films have attracted much attention due to their useful properties and applications. These properties are quite variable depending on film preparation techniques and conditions, DLC is a metastable state formed from highly non-equilibrium phases during the condensation of ionized particles. The nature of the films is therefore strongly dependent on their particular chemical structures. In this study, electron energy loss spectroscopy (EELS) was used to investigate how the chemical bonding configurations of DLC films vary as a function of sputtering power densities. The electrical resistivity of the films was determined, and related to their chemical structure.DLC films with a thickness of about 300Å were prepared at 0.1, 1.1, 2.1, and 10.0 watts/cm2, respectively, on NaCl substrates by d.c. magnetron sputtering. EEL spectra were obtained from diamond, graphite, and the films using a JEOL 200 CX electron microscope operating at 200 kV. A Gatan parallel EEL spectrometer and a Kevex data aquisition system were used to analyze the energy distribution of transmitted electrons. The electrical resistivity of the films was measured by the four point probe method.

Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Neeta Agrawal ◽  
R. D. Tarey ◽  
K. L. Chopra
Keyword(s):  
Etch Rate ◽  
Argon Plasma ◽  
Surface Modifications ◽  
Surface Chemical ◽  
Plasma Exposure ◽  
X Ray ◽  
Aluminium Fluoride ◽  
A New Technique ◽  
Plasma Exposure Time ◽  
Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

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