scholarly journals Design and synthesis of multidentate ligands via metal promoted C-N bond formation processes and their coordination chemistry

2002 ◽  
Vol 114 (4) ◽  
pp. 339-346 ◽  
Author(s):  
Kunal K Kamar ◽  
Amrita Saha ◽  
Sreebrata Goswami
Keyword(s):  
Coordination Chemistry ◽  
Bond Formation ◽  
Formation Processes ◽  
Multidentate Ligands ◽  
Design And Synthesis

scholarly journals Metal-free visible light photoredox enables generation of carbyne equivalents via phosphonium ylide C–H activation

2019 ◽  
Vol 10 (6) ◽  
pp. 1687-1691 ◽  
Author(s):  
Mrinmoy Das ◽  
Minh Duy Vu ◽  
Qi Zhang ◽  
Xue-Wei Liu
Keyword(s):  
Visible Light ◽  
Bond Formation ◽  
Formation Processes ◽  
New Approach ◽  
Carbon Bond ◽  
Metal Free ◽  
Carbon Carbon Bond ◽  
Carbon Carbon Bonds ◽  
Carbon Bonds ◽  
New Strategy

Phosphonium ylides have shown their synthetic usefulness in important carbon–carbon bond formation processes. Our new strategy employs phosphonium ylides as novel carbyne equivalents and features a new approach for constructing carbon–carbon bonds from alkenes.

New o-substituted diphenylphosphinic amide ligands: synthesis, characterization and complexation with Zn2+, Cu2+ and Y3+

2019 ◽  
Vol 43 (35) ◽  
pp. 13881-13890 ◽  
Author(s):  
Antônia Carlene Rodrigues Furtado Medeiros ◽  
Marcos Martins Gouvêa ◽  
Thaian Vieira Felipe ◽  
Flávia Ferreira de Carvalho Marques ◽  
Alice Maria Rolim Bernardino ◽  
...  
Keyword(s):  
Coordination Chemistry ◽  
Design And Synthesis ◽  
Amide Ligands ◽  
Amide Derivatives ◽  
Significant Attention

Phosphinic amide derivatives have drawn significant attention in coordination chemistry and have been incorporated into the design and synthesis of new ligands.

Deposition, Defect and Weak Bond Formation Processes in a-Si:H

1998 ◽  
Vol 507 ◽  
Author(s):  
J Robertson ◽  
M J Powell
Keyword(s):  
Hydrogen Evolution Reaction ◽  
Surface Defect ◽  
Defect Formation ◽  
Defect Density ◽  
Bond Formation ◽  
Surface Processes ◽  
Formation Processes ◽  
Weak Bond ◽  
Further Development ◽  
Surface Defect Density

ABSTRACTThe growth of a-Si:H and the resulting weak bond and defect formation mechanism is analysed in terms of the adsorbed Sill3 model of growth. It is found that this model describes the surface processes well, but it needs further development to correctly describe the temperature dependence of the formation of defects and weak bonds, since the surface defect density decreases monotonically with temperature and does not show a minimum near 250C. We show that the experimentally observed increase in hydrogen content, weak bond and defect density at lower deposition temperatures can be accounted for by a hydrogen evolution reaction from H2* sites.

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