Polymethylmethacrylate langmuir-blodgett films for high resolution electron beam resist

1994 ◽  
Vol 11 (3) ◽  
pp. 247-252 ◽  
Author(s):  
Lu Wu ◽  
Gu Ning ◽  
Wei Yu ◽  
Shen Haoying ◽  
Zhang Lan
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Langmuir Blodgett ◽  
Resolution Electron ◽  
Langmuir Blodgett Films

High-resolution electron beam lithography of PMMA derivatives with Langmuir-Blodgett films

1997 ◽  
Vol 85 (1-3) ◽  
pp. 1407-1408 ◽  
Author(s):  
Chang Nam Kim ◽  
Dong Woo Kang ◽  
Eung Ryul Kim ◽  
Haiwon Lee
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Langmuir Blodgett ◽  
Resolution Electron ◽  
Langmuir Blodgett Films

Quantitative high-resolution electron microscopy (HREM) of defects in ordered polymers

1996 ◽  
Vol 54 ◽  
pp. 166-167
Author(s):  
Patricia M. Wilson ◽  
David C. Martin
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Liquid Crystalline ◽  
High Resolution Electron Microscopy ◽  
Polymer Materials ◽  
Scattered Electron ◽  
Crystalline Polymers ◽  
Resolution Electron ◽  
Beam Damage

Efforts in our laboratory and elsewhere have established the utility of low dose high resolution electron microscopy (HREM) for imaging the microstructure of crystalline and liquid crystalline polymers. In a number of polymer systems, direct imaging of the lattice spacings by HREM has provided information about the size, shape, and relative orientation of ordered domains in these materials. However, because of the extent of disorder typical in many polymer microstructures, and because of the sensitivity of most polymer materials to electron beam damage, there have been few studies where the contrast observed in HREM images has been analyzed in a quantitative fashion.Here, we discuss two instances where quantitative information about HREM images has been used to provide new insight about the organization of crystalline polymers in the solid-state. In the first, we study the distortion of the polymer lattice planes near the core of an edge dislocation and compare these results to theories of dislocations in anisotropic and liquid crystalline solids. In the second, we investigate the variations in HREM contrast near the edge of wedge-shaped samples. The polymer used in this study was the diacetylene DCHD, which is stable to electron beam damage (Jc = 20 C/cm2) and highly crystalline. The instrument used in this work was a JEOL 4000 EX HRTEM with a beam blanidng device. More recently, the 4000 EX has been installed with instrumentation for dynamically recording scattered electron beam currents.

Evaluation of poly(p-trimethylsilylstyrene and p-pentamethyldisilylstyrene sulfone)s as high-resolution electron-beam resists

1991 ◽  
Author(s):  
Antoni S. Gozdz ◽  
Hiroshi Ono ◽  
Seiki Ito ◽  
John A. Shelburne III ◽  
Minoru Matsuda
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Resolution Electron

High resolution electron beam lithography on CaF2

1984 ◽  
Vol 44 (4) ◽  
pp. 468-469 ◽  
Author(s):  
P. M. Mankiewich ◽  
H. G. Craighead ◽  
T. R. Harrison ◽  
A. H. Dayem
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Resolution Electron

Atomic Scale Study of Cosi/Si (111) and CoSi2/Si (111) Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
A. Catana ◽  
M. Heintze ◽  
P.E. Schmid ◽  
P. Stadelmann
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Orientation Relationship ◽  
Cross Sections ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Initial Stage ◽  
Resolution Electron

ABSTRACTHigh Resolution Electron Microscopy (HREM) was used to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. CoSi is found to grow epitaxially on Si with [111]Si // [111]CoSi and < 110 >Si // < 112 >CoSi. Two CoSi non-equivalent orientations (rotated by 180° around the substrate normal) can occur in this plane. They can be clearly distinguished by HRTEM on cross-sections ( electron beam along [110]Si). At about 500°C CoSi transforms to CoSi2. Experimental results show that the type B orientation relationship satisfying [110]Si // [112]CoSi is preserved after the initial stage of CoSi2 formation. At this stage an epitaxial CoSi/CoSi2/Si(111) system is obtained. The atomic scale investigation of the CoSi2/Si interface shows that a 7-fold coordination of the cobalt atoms is observed in both type A and type B epitaxies.

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