The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxy
1995 ◽
Vol 24
(11)
◽
pp. 1697-1701
◽
Keyword(s):
1987 ◽
Vol 26
(Part 2, No. 12)
◽
pp. L2000-L2002
◽
Keyword(s):
Effect of growth rate on properties of Ga 0.51 In 0.49 P grown by organometallic vapor phase epitaxy
1991 ◽
Vol 109
(1-4)
◽
pp. 279-284
◽
Keyword(s):
1999 ◽
Vol 273-274
◽
pp. 770-773
◽
1994 ◽
Vol 23
(2)
◽
pp. 159-166
◽
1991 ◽
Vol 30
(Part 2, No. 3B)
◽
pp. L507-L510
◽