Investigation of the wafer temperature uniformity in an omvpe vertical rotating disk reactor

1995 ◽  
Vol 24 (11) ◽  
pp. 1637-1640 ◽  
Author(s):  
A. I. Gurary ◽  
A. G. Thompson ◽  
R. A. Stall ◽  
W. J. Kroll ◽  
N. E. Schumaker
Keyword(s):  
Rotating Disk ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Rotating Disk Reactor

Producing and Controlling Substrate Temperature Uniformity from 600°C to 1100°C in CVC Rotating Disk Reactors

1994 ◽  
Vol 363 ◽  
Author(s):  
A. I. Gurary ◽  
G. S. Tompa ◽  
R. A. Stall ◽  
W. J. Kroll ◽  
P. Zawadzki ◽  
...  
Keyword(s):  
Process Parameters ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Yield ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Heating Systems ◽  
Wide Range ◽  
Rotating Disk Reactors ◽  
High Degree

AbstractRotating Disk Reactors used for Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including metals, compound semiconductors, oxides, silicides, and nitrides. One of the hurdles to be surmounted in bringing this technology into routine high yield manufacturing has been to produce and maintain a highly uniform temperature distribution over the deposition area. With our recent introduction of the real-time Rotating Wafer Thermal Imaging (RWTI) technique, we have made dramatic improvements in the implementation of multi-zone heating systems and producing a uniform deposition temperature. Using multi-zone heaters we have demonstrated wafer temperature uniformity of less than 2°C in the temperature range from 600°C to 1100°C for 50 mm substrates located on wafer carriers with diameters from 125 to 300 mm. The wafer temperature uniformity dependence upon process parameters such as reactor pressure, reactant flows, and wafer carrier rotation speed was investigated. We have shown that multi-zone heating systems can provide high wafer temperature uniformity over a wide range of the process parameters, whereas single zone heating can provide a high degree of wafer temperature uniformity only for a limited set of process parameters. The experimental data allowed us to establish requirements for the application of single and multi-zone heating systems in vertical MOCVD Rotating Disk Reactors.

A New Flexible Rapid Thermal Processing System

1995 ◽  
Vol 389 ◽  
Author(s):  
K. C. Saraswat ◽  
Y. Chen ◽  
L. Degertekin ◽  
B. T. Khuri-Yakub
Keyword(s):  
Control System ◽  
Real Time ◽  
Processing System ◽  
Process Conditions ◽  
Temperature Uniformity ◽  
Real Time Control ◽  
Wafer Temperature ◽  
Time Control ◽  
Wide Range ◽  
Optical Flux

ABSTRACTA highly flexible Rapid Thermal Multiprocessing (RTM) reactor is described. This flexibility is the result of several new innovations: a lamp system, an acoustic thermometer and a real-time control system. The new lamp has been optimally designed through the use of a “virtual reactor” methodology to obtain the best possible wafer temperature uniformity. It consists of multiple concentric rings composed of light bulbs with horizontal filaments. Each ring is independently and dynamically controlled providing better control over the spatial and temporal optical flux profile resulting in excellent temperature uniformity over a wide range of process conditions. An acoustic thermometer non-invasively allows complete wafer temperature tomography under all process conditions - a critically important measurement never obtained before. For real-time equipment and process control a model based multivariable control system has been developed. Extensive integration of computers and related technology for specification, communication, execution, monitoring, control, and diagnosis demonstrates the programmability of the RTM.

Design of a rotating disk reactor to assess the colonization of biofilms by free-living amoebae under high shear rates

Biofouling ◽  
2018 ◽  
Vol 34 (4) ◽  
pp. 368-377 ◽  
Author(s):  
A. Perrin ◽  
P. Herbelin ◽  
F. P. A. Jorand ◽  
S. Skali-Lami ◽  
L. Mathieu
Keyword(s):  
Rotating Disk ◽  
High Shear ◽  
Free Living ◽  
Shear Rates ◽  
High Shear Rates ◽  
Rotating Disk Reactor

CO2 absorption performance in a rotating disk reactor using DBU-glycerol as solvent

2020 ◽  
Vol 28 (1) ◽  
pp. 104-113 ◽  
Author(s):  
Hualing Duan ◽  
Kun Zhu ◽  
Houfang Lu ◽  
Changjun Liu ◽  
Kejing Wu ◽  
...  
Keyword(s):  
Rotating Disk ◽  
Co2 Absorption ◽  
Rotating Disk Reactor ◽  
Absorption Performance

CH3I vapor etching of GaAs in a vertical rotating-disk reactor

1996 ◽  
Vol 169 (1) ◽  
pp. 51-60
Author(s):  
C.W. Krueger ◽  
S. Patnaik ◽  
C.A. Wang ◽  
M. Flytzani-Stephanopoulos
Keyword(s):  
Rotating Disk ◽  
Rotating Disk Reactor

Temperature Measurements Using In Thermocouple In The Mocvd Rotating Disk Reactors

1995 ◽  
Vol 406 ◽  
Author(s):  
A. I. Gurary ◽  
R. A. Stall
Keyword(s):  
Process Parameters ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Temperature Measurements ◽  
High Yield ◽  
Wafer Temperature ◽  
Rotating Disk Reactors ◽  
And Control ◽  
Measurement And Control ◽  
Accuracy And Repeatability

AbstractRotating Disk Reactors used for Metalorganic Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including nitrides, compound semiconductors, metals, and oxides. One of the major issues to be resolved in bringing this technology into routine high yield manufacturing has been precise and repeatable wafer temperature measurement and control. The conventional approach to the rotating wafer temperature measurements by a stationary thermocouple located near the rotating wafer carrier suffers from low accuracy and repeatability. We have implemented a rotating thermocouple with a junction located close to the wafer for the temperature measurements in the MOCVD Rotating Disk Reactor. This approach allowed us to obtain reliable and accurate wafer temperature measurements with minimum dependence upon variable process parameters and to protect the thermocouple from degradation in the aggressive reactor environment. The temperature difference between wafer and thermocouple for the rotating and stationary thermocouple designs as a function of process parameters will be discussed.

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