Investigation of infrared spectra and determination of the main optical constants, of CaB6

1997 ◽  
Vol 36 (7-8) ◽  
pp. 413-415 ◽  
Author(s):  
G. G. Tsebulya ◽  
G. K. Kozina ◽  
A. P. Zakharchuk ◽  
A. V. Kovalev ◽  
E. M. Dudnik
Keyword(s):  
Infrared Spectra ◽  
Optical Constants

scholarly journals Determination of the Thickness and Optical Constants of ZrO2 by Spectroscopic Ellipsometry and Spectrophotometric Method

2011 ◽  
Vol 8 ◽  
pp. 223-227 ◽  
Author(s):  
R. Yusoh ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
S. Chanyawadee ◽  
K. Aiempanakit
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Spectrophotometric Method ◽  
Optical Constants

Determination of optical constants and thicknesses of In2O3:Sn films from transmittance data

2007 ◽  
Vol 515 (18) ◽  
pp. 7387-7392 ◽  
Author(s):  
Fachun Lai ◽  
Limei Lin ◽  
Rongquan Gai ◽  
Yongzhong Lin ◽  
Zhigao Huang
Keyword(s):  
Optical Constants

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

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