Tight-binding bond order potential a forces for atomistic simulations

1997 ◽  
Vol 18 (6) ◽  
pp. 614-623 ◽  
Author(s):  
M. Aoki ◽  
A. P. Horsfield ◽  
D. G. Pettifor
2008 ◽  
Vol 59 ◽  
pp. 247-252 ◽  
Author(s):  
Jan Fikar ◽  
Robin Schäublin ◽  
Carolina Björkas

Atomistic simulations are used to describe the ½<111> screw dislocation in tungsten. Two different embedded atom model (EAM) potentials and one bond-order potential (BOP) are compared. A new analytical approach for constructing asymmetrical screw dislocations is presented.


2013 ◽  
Vol 88 (6) ◽  
Author(s):  
Romain Perriot ◽  
Xiang Gu ◽  
You Lin ◽  
Vasily V. Zhakhovsky ◽  
Ivan I. Oleynik

2019 ◽  
Vol 235 ◽  
pp. 221-233 ◽  
Author(s):  
T. Hammerschmidt ◽  
B. Seiser ◽  
M.E. Ford ◽  
A.N. Ladines ◽  
S. Schreiber ◽  
...  

2000 ◽  
Author(s):  
Betsy M. Rice ◽  
Genrich L. Krasko ◽  
Sid Yip

2006 ◽  
Vol 18 (29) ◽  
pp. 6585-6605 ◽  
Author(s):  
Paul Erhart ◽  
Niklas Juslin ◽  
Oliver Goy ◽  
Kai Nordlund ◽  
Ralf Müller ◽  
...  

1993 ◽  
Vol 07 (01n03) ◽  
pp. 299-304 ◽  
Author(s):  
M. AOKI ◽  
D. G. PETTIFOR

Angularly-dependent many-atom potentials for the bond order of saturated or unsaturated bonds are derived within the tight binding (TB) Hückel approximation. These potentials are firmly based on the theorem of linearized many-atom expansion for the bond order, which is novel and gives exact bond order. The explicit angular dependence appears through the moments and interference terms about a bond. Since these potentials give an appropriate description of bonding, they should play an important role in atomistic simulations for semiconductors and transition metals and their compounds. We demonstrate the rapid convergence of the many-atom series for the potentials through some illustrative examples from s bonded elements and d bonded transition metals.


2003 ◽  
Vol 779 ◽  
Author(s):  
Marc J. Cawkwell ◽  
Duc Nguyen-Manh ◽  
Vaclav Vitek ◽  
David G. Pettifor

AbstractThe extremely high melting point and excellent resistance to oxidation and corrosion offered by iridium suggest numerous applications of this transition metal in static components at high temperatures and in aggressive environments. However, the mechanical and physical properties of f.c.c. Ir exhibit numerous anomalies when compared to other metals that crystallize in the f.c.c. structure. Notable examples include a negative Cauchy pressure, 1/2 (C12 – C44), brittle transgranular cleavage after a period of plastic flow even in pure single crystals and anomalous [ΆΆ0] branches in the phonon spectra. Atomistic studies of extended defects are needed to elucidate the origin of anomalous mechanical properties, such as brittleness. For this purpose we developed a Bond-Order Potential (BOP), an O(N) tight-binding formalism, employing physically transparent parameterizations that use experimental and ab initio data, generated in this study using the Full Potential Augmented Plane Wave plus Local Orbitals (APW+lo) method. The constructed BOP reproduces then both equilibrium as well as a variety of nonequilibrium properties of Ir and represents an excellent description of cohesion in f.c.c. Ir. This description of interatomic interactions is imminently suitable for studies of defects, such as dislocations and grain boundaries, that control plastic deformation and fracture.


2000 ◽  
Vol 653 ◽  
Author(s):  
Matous Mrovec ◽  
Duc Nguyen-Manh ◽  
David G. Pettifor ◽  
Vaclav Vitek

AbstractWe present a new Screened Bond-Order Potential (SBOP) for molybdenum in which the environmental dependence of two-center tight-binding bond integrals has been implemented via a recently developed analytic expression. These bond integrals reproduce very well the numerical ab-intio values of screened LMTO bond integrals. In particular, they display the large discontinuity in ddπ between the first and second nearest neighbor of the bcc lattice whereas they do not show any discontinuity in ddσ. This dependence can be traced directly to the angular character of the analytic screening function and is shown to be critical for the behavior of the second nearest neighbor force constants. The new BOP eliminates the problem of the very soft T2 phonon mode at the N point that is found in most two-center tight-binding models. Preliminary study of the core structure of 1/2<111> screw dislocations performed using SBOP indicates that the core is narrower and less asymmetric than structures found in previous studies, in agreement with recent ab-initio calculations.


2004 ◽  
Vol 842 ◽  
Author(s):  
Marc J. Cawkwell ◽  
Matous Mrovec ◽  
Duc Nguyen-Manh ◽  
David G. Pettifor ◽  
Vaclav Vitek

ABSTRACTThe intermetallic compound MoSi2, which adopts the C11b crystal structure, and related alloys exhibit an excellent corrosion resistance at high temperatures but tend to be brittle at room and even relatively high temperatures. The limited ductility of MoSi2 in ambient conditions along with the anomalous temperature dependence of the critical resolved shear stress (CRSS) of the {110)<111], {011)<100] and {010)<100] slip systems and departure from Schmid law behavior of the {013)<331] slip system can all be attributed to complex dislocation core structures. We have therefore developed a Bond-Order Potential (BOP) for MoSi2 for use in the atomistic simulation of dislocations and other extended defects. BOPs are a real-space, O(N), two-center orthogonal tight-binding formalism that are naturally able to describe systems with mixed metallic and covalent bonding. In this development novel analytic screening functions have been adopted to properly describe the environmental dependence of bond integrals in the open, bcc-based C11b crystal structure. A many-body repulsive term is included in the model that allows us to fit the elastic constants and negative Cauchy pressures of MoSi2. Due to the internal degree of freedom in the position of the Si atoms in the C11b structure which is a function of volume, it was necessary to adopt a self-consistent procedure in the fitting of the BOP. The constructed BOP is found to be an excellent description of cohesion in C11b MoSi2 and we have carefully assessed its transferability to other crystal structures and stoichiometries, notably C 40, C 49 and C 54 MoSi2, A15 and D03 Mo3Si and D8m Mo5Si3 by comparing with ab initio structural optimizations.


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