Low pressure MOVPE growth of ZnSe, ZnTe, and ZnSe/ZnTe strained-layer superlattices

1993 ◽  
Vol 22 (5) ◽  
pp. 537-543 ◽  
Author(s):  
N. Briot ◽  
T. Cloitre ◽  
O. Briot ◽  
B. Gil ◽  
D. Bertho ◽  
...  
Keyword(s):  
Low Pressure ◽  
Strained Layer ◽  
Movpe Growth ◽  
Strained Layer Superlattices

Growth and properties of GaxIn1−xAs–GaAs strained layer superlattices grown by low-pressure metal-organic vapour-phase epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 909-912 ◽  
Author(s):  
A. P. Roth ◽  
R. A. Masut ◽  
M. Sacilotti ◽  
P. J. D'Arcy ◽  
G. I. Sproule ◽  
...  
Keyword(s):  
Gas Flow ◽  
Flow Direction ◽  
Low Pressure ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Strained Layer ◽  
Additional Strain ◽  
Metal Organic ◽  
Organic Vapour ◽  
Strained Layer Superlattices

We have analyzed the structural and optical properties of GaxIn1−xAs–GaAs strained-layer superlattices (SLS) grown by low-pressure metal-organic vapour-phase epitaxy. Sample uniformity over 2.5 cm × 2.5 cm has been studied by X-ray diffraction and low-temperature photoluminescence. The sample composition and period are uniform in the longitudinal direction (gas-flow direction in the reactor) and in the central portion (1.5 cm) in the transverse direction. On each side, the In composition decreases slightly towards the edges, as shown by an energy shift of the photoluminescence excitonic recombinations. Comparison of experimental and calculated transition energies in a series of samples, taking into account strain and quantization, shows clearly that SLS grown on mismatched buffer layers arc under additional strain. This additional strain is not present when the layer or whole SLS thicknesses exceed a critical value beyond which the mismatch is partially accommodated by misfit dislocations.

GeSiSi strained layer superlattices grown by low-pressure CVD

1992 ◽  
Vol 60-61 ◽  
pp. 602-607 ◽  
Author(s):  
K. Nakai ◽  
Y. Gotoh ◽  
M. Ozeki ◽  
K. Nakajima
Keyword(s):  
Low Pressure ◽  
Strained Layer ◽  
Strained Layer Superlattices

GaInAs/GaAs strained‐layer superlattices grown by low pressure metalorganic vapor phase epitaxy

1986 ◽  
Vol 48 (21) ◽  
pp. 1452-1454 ◽  
Author(s):  
A. P. Roth ◽  
M. Sacilotti ◽  
R. A. Masut ◽  
P. J. D’Arcy ◽  
B. Watt ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Strained Layer ◽  
Strained Layer Superlattices

Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers

1992 ◽  
Vol 18 (1-2) ◽  
pp. 57-74 ◽  
Author(s):  
P.J.A Thijs ◽  
J.J.M Binsma ◽  
L.F Tiemeijer ◽  
P.I Kuindersma ◽  
T van Dongen
Keyword(s):  
Quantum Well ◽  
Low Pressure ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Movpe Growth

MOVPE Growth and optical characterization of ZnSe/ZnS strained layer superlattices

1994 ◽  
Vol 16 (1) ◽  
pp. 71-76 ◽  
Author(s):  
L. Aigouy ◽  
N. Briot ◽  
D. Bouchara ◽  
T. Cloitre ◽  
M. di Blasio ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Strained Layer ◽  
Movpe Growth ◽  
Strained Layer Superlattices

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices

nBn structure based on InAs∕GaSb type-II strained layer superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 043514 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
G. Bishop ◽  
Y. D. Sharma ◽  
H. Kim ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices
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