On reaction-sintering production of silicon carbide materials

1997 ◽  
Vol 70 (2) ◽  
pp. 258-261 ◽  
Author(s):  
L. N. D’yachkova ◽  
E. V. Zvonarev ◽  
V. M. Shelekhina ◽  
M. A. Isupov
Keyword(s):  
Silicon Carbide ◽  
Reaction Sintering

Silicon carbide micro-reaction-sintering using micromachined silicon molds

2001 ◽  
Vol 10 (1) ◽  
pp. 55-61 ◽  
Author(s):  
S. Tanaka ◽  
S. Sugimoto ◽  
J.-F. Li ◽  
R. Watanabe ◽  
M. Esashi
Keyword(s):  
Silicon Carbide ◽  
Reaction Sintering

Reaction Sintering of Carbon Fiber Reinforced Silicon Carbide Composite by Gel-Casting Method with Water Soluble Epoxy Resin as Gel Former

2011 ◽  
Vol 335-336 ◽  
pp. 176-181 ◽  
Author(s):  
Jing Wei ◽  
Jing Zhong Fang ◽  
Ai Fang Zhang
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Carbon Fiber ◽  
Carbon Fibers ◽  
Water Soluble ◽  
Reaction Sintering ◽  
Fiber Reinforced ◽  
Casting Method ◽  
Gel Casting ◽  
Short Carbon

Reaction-bonding sintering silicon carbide (RB-SiC) toughened by 10vol% short carbon fibers were produced by Gel-casting method using water soluble epoxy as gel former and then reaction sintering at 1750°C under vacuum atmosphere for 2 h . SEM showed that short carbon fibers could disperse uniformly in the preforms and sintered carbon fiber reinforced silicon carbide composites (Cf/SiC). The mechanical test results showed that the strength decrease from 286 MPa for RB-SiC to 231 MPa for Cf/SiC, however, the fracture toughness of Cf/SiC increased from 3.65 MPa m1/2 to 5.28 MPa m1/2 compared with RB-SiC. The strength decrease of the Cf/SiC should be ascribed to the chemical reaction between the addition of short fibers and matrix, and the increase of the fracture toughness could be attributed to fiber debonding, fiber pull-out and crack deflection .

Sintering temperature-microstructure-property relationships of alumina matrix composites with silicon carbide and silica additives

2017 ◽  
Vol 24 (4) ◽  
pp. 495-500 ◽  
Author(s):  
Apichart Limpichaipanit ◽  
Sukanda Jiansirisomboon ◽  
Tawee Tunkasiri
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Grain Size ◽  
Fracture Surface ◽  
Sintering Temperature ◽  
Matrix Composites ◽  
Reaction Sintering ◽  
Alumina Matrix ◽  
Powder Mixtures ◽  
Ceramic Samples

AbstractAlumina-based composites were fabricated by reaction sintering from two different sintering powder mixtures: alumina with silica (SiO2) and alumina with silicon carbide (SiC; to allow oxidation to form SiO2). After sintering, SiO2 underwent complete reaction to form alumina/mullite composites. In terms of microstructure, the density and grain size of ceramic samples were investigated. The density of the composites prepared by alumina and SiC was lower than those of alumina and the composites prepared by alumina and SiO2. The grain size increased as the sintering temperature increased. In terms of mechanical properties, fracture surfaces, hardness, and fracture toughness were investigated. It was found that the fracture surface of alumina was rather intergranular, whereas the fracture surface of the composites was more transgranular. The hardness of the composites was higher than that of alumina at the same sintering temperature. However, the fracture toughness of the composites was not significantly different compared to that of alumina.

Structural Ceramic Materials Under Development

1975 ◽  
Author(s):  
F. F. Lange
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Silicon Nitride ◽  
Stress Analysis ◽  
Structural Design ◽  
Hot Pressing ◽  
Ceramic Materials ◽  
Reaction Sintering ◽  
Structural Ceramic ◽  
Conventional Sintering

A variety of different promising high temperature structural materials exist under the generic names of silicon nitride (Si3N4) and silicon carbide (SiC). Each of these materials are fabricated by a different method and thus, each develop different microstructures and different properties. The relations between fabrication, microstructure and properties will be reviewed for both Si3N4 and SiC fabricated by (a) reaction-sintering, (b) conventional sintering, and (c) hot-pressing. The object of this review is to allow the engineer to obtain a better understanding of the different materials that are becoming available for high temperature structural design applications. An Appendix presents the properties of these materials required for stress analysis.

scholarly journals Effect of reaction sintering modes on the structure and properties of carbide ceramics

2019 ◽  
Vol 63 (4) ◽  
pp. 407-415
Author(s):  
E. V. Zvonarev ◽  
A. Ph. Ilyushchanka ◽  
Zh. A. Vitko ◽  
V. A. Osipov ◽  
D. V. Babura
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Boron Carbide ◽  
Experimental Studies ◽  
Main Task ◽  
Reaction Sintering ◽  
Silicon Melt ◽  
Carbide Particles ◽  
Compacting Pressure

Experimental studies of the structure, phase composition, physical and mechanical properties of the reaction-sintered ceramics based on silicon carbide and boron obtained by reaction sintering have been performed. It has been shown that the properties of the reaction-sintered ceramics based on carbides are largely determined by the quality of impregnation of the porous carbide frame with silicon, which depends on the total and open porosity, shape and size of the pores of the compact, the composition of the charge from the carbide powder. High-temperature sintering, followed by impregnation of the carbide frame with silicon and its interaction with the carbon constituent of the frame, largely determines the properties of the material. The main task in the implementation of this process is to create conditions that ensure the full filling of pores in the initial compact during impregnation with silicon melt and, secondly, maximum activation of chemical interaction between the melt of silicon, carbon and other components that compose the charge. A complex of studies on the effect of compacting pressure and annealing temperature of the charge based on silicon carbide and boron powders with the addition of graphite on the pore structure of the compact and the quality of its impregnation with a silicon melt has been carried out in this work. It has been shown that the density, bending strength, hardness of ceramics based on silicon carbide and boron carbide obtained by reaction sintering are increased with a rise in compacting pressure of carbide frames. The optimum porosity of the carbide frame is 25–30 %; the pore size is 1.0–1.5 μm. It has been also demonstrated that ceramics based on boron carbide and boron carbide with 50 % silicon carbide impregnated with silicon at high-temperature sintering has higher strength and hardness values than those based on silicon carbide due to higher adhesion strength at the interface of boron carbide particles and binder, caused by the dissolution of boron carbide in the silicon melt and the formation of complex carbide particles on the surface.

Morphology of SiC Whisker in Whisker Reinforced Reaction Bonded SiC Composite

2012 ◽  
Vol 457-458 ◽  
pp. 422-426
Author(s):  
Shuang Li ◽  
Yu Min Zhang ◽  
Jie Cai Han ◽  
Yu Feng Zhou
Keyword(s):  
Silicon Carbide ◽  
Chemical Etching ◽  
Slip Casting ◽  
Polished Surface ◽  
Molten Silicon ◽  
Reaction Sintering ◽  
Ultrasonic Dispersion ◽  
Rapid Reaction ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

SiC whisker was introduced into reaction bonded silicon carbide to produce high performances composite by slip casting and reaction sintering. This study aimed at morphology of SiC whisker in the reaction bonded silicon carbide ceramics. The whisker was homogeneously dispersed into SiC/C suspension by ball-milling and ultrasonic dispersion. By chemical etching, the whisker displays the original burl profile on the polished surface of the composite. The raise of whisker fraction leads to an increase of porosity of the green body; and thus a decrease of density of the sintered body. For the specimen with 25 wt.% whisker, the rapid reaction of carbon with excess molten silicon leads to the missing of burl profile on the whisker surface. It is speculated that β-SiC on the whisker surface dissolved in the molten silicon during liquid silicon infiltration.

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