Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAs

1975 ◽  
Vol 4 (1) ◽  
pp. 37-66 ◽  
Author(s):  
M. Ettenberg ◽  
C. J. Nuese ◽  
J. R. Appert ◽  
J. J. Gannon ◽  
R. E. Enstrom
Keyword(s):  
Liquid Phase ◽  
Vapor Phase ◽  
Liquid Phase Epitaxial

Channelled‐substrate buried heterostructure InGaAsP/InP lasers with vapor phase epitaxial base structure and liquid phase epitaxial regrowth

1984 ◽  
Vol 56 (3) ◽  
pp. 710-712 ◽  
Author(s):  
D. P. Wilt ◽  
R. F. Karlicek ◽  
K. E. Strege ◽  
W. C. Dautremont‐Smith ◽  
N. K. Dutta ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Vapor Phase ◽  
Liquid Phase Epitaxial ◽  
Epitaxial Regrowth ◽  
Buried Heterostructure ◽  
Base Structure

LIQUID PHASE EPITAXIAL GROWTH OF InxGa1-xAs/ InP NEAR SOLID INSTABILITY

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-3-C5-10 ◽  
Author(s):  
M. C. Joncour ◽  
J. L. Benchimol ◽  
J. Burgeat ◽  
M. Quillec
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth

Liquid phase epitaxial regrowth on sulfide‐passivated Ga1−xAlxAs

1993 ◽  
Vol 63 (7) ◽  
pp. 970-972 ◽  
Author(s):  
V. L. Berkovits ◽  
V. M. Lantratov ◽  
T. V. L’vova ◽  
G. A. Shakiashvili ◽  
V. P. Ulin ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxial ◽  
Epitaxial Regrowth
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