Incorporation of boron into UHV/CVD-grown germanium-silicon epitaxial layers

1992 ◽  
Vol 21 (6) ◽  
pp. 593-597 ◽  
Author(s):  
D. W. Greve ◽  
Marco Racanelli
Keyword(s):  
Epitaxial Layers ◽  
Germanium Silicon

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

2021 ◽  
Vol 560-561 ◽  
pp. 126033
Author(s):  
J. Erlekampf ◽  
M. Rommel ◽  
K. Rosshirt-Lilla ◽  
B. Kallinger ◽  
P. Berwian ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Influence Of Substrate

scholarly journals Perspectives on UVC LED: Its Progress and Application

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 196
Author(s):  
Tsung-Chi Hsu ◽  
Yu-Tsai Teng ◽  
Yen-Wei Yeh ◽  
Xiaotong Fan ◽  
Kuo-Hsiung Chu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Flip Chip ◽  
Layer Structure ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Reverse Current ◽  
Light Extraction ◽  
Epitaxial Layers ◽  
High Electron ◽  
Recombination Rates

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

2015 ◽  
Vol 57 (10) ◽  
pp. 1966-1971 ◽  
Author(s):  
V. N. Bessolov ◽  
A. S. Grashchenko ◽  
E. V. Konenkova ◽  
A. V. Myasoedov ◽  
A. V. Osipov ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Growth Mechanism ◽  
Epitaxial Layers ◽  
P Type

scholarly journals Interface relaxation and band gap shift in epitaxial layers

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042185 ◽  
Author(s):  
Ziming Zhu ◽  
Ai Zhang ◽  
Yan He ◽  
Gang Ouyang ◽  
Guowei Yang
Keyword(s):  
Band Gap ◽  
Epitaxial Layers

Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DP04 ◽  
Author(s):  
Keiko Masumoto ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Chiaki Kudou ◽  
Johji Nishio ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth
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