Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

1994 ◽  
Vol 23 (2) ◽  
pp. 225-232 ◽  
Author(s):  
G. Coudenys ◽  
I. Moeeman ◽  
G. Vermeire ◽  
F. Vermaerke ◽  
Y. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Low Pressure ◽  
Movpe Growth ◽  
Pressure Shadow

Low pressure MOVPE growth and characterization of ZnTe homoepitaxial layers

2016 ◽  
Vol 13 (7-9) ◽  
pp. 439-442 ◽  
Author(s):  
Mitsuhiro Nishio ◽  
Katsuhiko Saito ◽  
Masakatsu Abiru ◽  
Eiichiro Mori ◽  
Yasuhiro Araki ◽  
...  
Keyword(s):  
Low Pressure ◽  
Movpe Growth ◽  
Homoepitaxial Layers

Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and InxGa1−xAs/GaAs strained quantum wells

Vacuum ◽  
2004 ◽  
Vol 74 (2) ◽  
pp. 263-267 ◽  
Author(s):  
B. Ściana ◽  
D. Radziewicz ◽  
B. Paszkiewicz ◽  
M. Tłaczała ◽  
P. Sitarek ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Movpe Growth

Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Low pressure MOVPE growth of Si-doped Ga0.5In0.5P using Si2H6

1988 ◽  
Vol 93 (1-4) ◽  
pp. 618-623 ◽  
Author(s):  
Hitoshi Hotta ◽  
Isao Hino ◽  
Tohru Suzuki
Keyword(s):  
Low Pressure ◽  
Movpe Growth ◽  
Si Doped

Electroluminescence from GalnN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes

2004 ◽  
Vol 831 ◽  
Author(s):  
Barbara Neubert ◽  
Frank Habel ◽  
Peter Bruckner ◽  
Ferdinand Scholz ◽  
Till Riemann ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Low Pressure ◽  
Lower Efficiency ◽  
Strong Light ◽  
The Common ◽  
Piezo Electric

ABSTRACTNon (0001) GalnN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1–100) compared to (11–20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.

MOVPE growth of strained InGaAsN/GaAs quantum wells

1998 ◽  
Vol 195 (1-4) ◽  
pp. 416-420 ◽  
Author(s):  
Hisao Saito ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Quantum Wells ◽  
Movpe Growth
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