Adjusting trimethylgallium injection time to explore atomic layer epitaxy of GaAs between 425 and 500°C by organometallic vapor phase epitaxy

1994 ◽  
Vol 23 (2) ◽  
pp. 185-189 ◽  
Author(s):  
C. A. Wang ◽  
D. M. Tracy
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Injection Time

Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga2O3as a Novel Mask Layer

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1516-1520 ◽  
Author(s):  
Shingo Hirose ◽  
Akihiro Yoshida ◽  
Masaaki Yamaura ◽  
Kazuhiko Hara ◽  
Hiro Munekata
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Mask Layer ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

2014 ◽  
Vol 11 (3-4) ◽  
pp. 393-396
Author(s):  
Guangxu Ju ◽  
Yoshihiro Kato ◽  
Yoshio Honda ◽  
Masao Tabuchi ◽  
Yoshikazu Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Atomic Layer ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
X Ray

Growth of CDTE on GaAs and Si Substrates by Organometallic Vapor Phase Epitaxy

1993 ◽  
Vol 318 ◽  
Author(s):  
Ishwara Bhat
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Cdte Layer ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality ◽  
X Ray ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Direct Growth

ABSTRACTEpitaxial (100) CdTe layers have been grown by organometallic vapor phase epitaxy (OMVPE) on GaAs and Si substrates. A thin layer of CdTe was first grown by atomic layer epitaxy (ALE) on GaAs substrates followed by thicker CdTe layer by conventional organometallic vapor phase epitaxy (OMVPE). This process resulted in high quality (100) CdTe on GaAs substrates. On Si substrates, direct growth of CdTe resulted in only polycrystalline layers. Hence, a thin Ge buffer layer grown at low temperature followed by an interfacial layer of ZnTe was used to get high quality (100) CdTe on Si. The process developed here eliminates the high temperature (>850°C) deoxidation step generally required when Si substrates are used. The CdTe layers were characterized by X-ray diffraction and optical microscopy. X-ray rocking curve with full width at half maximum (FWHM) of about 260 arcsec has been obtained for a 4 um thick CdTe layer. The results presented demonstrate novel techniques to control the hetero-interfaces in order to grow high quality CdTe on GaAs and Si substrates.

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