Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography

1990 ◽  
Vol 19 (7) ◽  
pp. 721-725 ◽  
Author(s):  
C. C. H. Hsu ◽  
L. K. Wang ◽  
J. Y. C. Sun ◽  
M. R. Wordeman ◽  
T. H. Ning
Keyword(s):  
Radiation Damage ◽  
X Ray ◽  
Hot Carrier

X-Ray Lithography Induced Radiation Effects In Deep Submicron Cmos Devices

1993 ◽  
Vol 306 ◽  
Author(s):  
L.K. Wang ◽  
A. Acovic ◽  
W.H. Chang
Keyword(s):  
Radiation Damage ◽  
Radiation Effects ◽  
Gate Oxide ◽  
High Energy ◽  
Deep Submicron ◽  
Interface States ◽  
Annealing Process ◽  
Dielectric Thickness ◽  
X Ray ◽  
Hot Carrier

AbstractX-ray lithography introduces device radiation damage from the high energy photons during the lithography process. We have studied this effect on deep submicron n- and p-channel MOSFETs with gate dielectric thickness at 7 to 13 nm. After the x-ray irradiation the device characteristics are strongly affected by the generation of oxide charges, interface states and electron traps. These introduced damages cause the reduction of device transconductance, shift of the threshold voltages and increased leakage current. However, this degradation of device and circuit is lessened from technology scaling by thinning the gate oxide and lowering the supply voltage. The x-ray radiation damage, induces interface states and oxide charges which can be annealed out with a low temperature (400°C) forming gas (FG, 90% N2, 10% H2) annealing process. The device properties are essential unchanged after the annealing process. However, the residue damage is shown to enhance hot-carrier instability of p-channel devices if the remaining neutral traps act as electron or hole traps in the SiO2. In this paper, we investigate the radiation effects on the n- and p-channel MOSFETS fabricated with deep submicron device processes with thinner gate oxides and compare the hot carrier reliability of these devices after the synchrotron x-ray irradiation and also after the post metal forming gas annealing. The results indicate the device hot carrier instability has no effect on the devices with thin gate oxide with thickness approaching the electron tunneling range.

Studies of metaphase chromosomes in the scanning transmission x-ray microscope: Image fidelity, radiation damage and specimen preparation

1992 ◽  
Vol 50 (2) ◽  
pp. 1038-1039
Author(s):  
Shawn Williams ◽  
Xiaodong Zhang ◽  
Susan Lamm ◽  
Jack Van’t Hof
Keyword(s):  
Visible Light ◽  
Radiation Damage ◽  
Cross Section ◽  
Imaging Techniques ◽  
Dose Range ◽  
Specimen Preparation ◽  
X Rays ◽  
Metaphase Chromosomes ◽  
X Ray ◽  
Scanning Transmission

The Scanning Transmission X-ray Microscope (STXM) is well suited for investigating metaphase chromosome structure. The absorption cross-section of soft x-rays having energies between the carbon and oxygen K edges (284 - 531 eV) is 6 - 9.5 times greater for organic specimens than for water, which permits one to examine unstained, wet biological specimens with resolution superior to that attainable using visible light. The attenuation length of the x-rays is suitable for imaging micron thick specimens without sectioning. This large difference in cross-section yields good specimen contrast, so that fewer soft x-rays than electrons are required to image wet biological specimens at a given resolution. But most imaging techniques delivering better resolution than visible light produce radiation damage. Soft x-rays are known to be very effective in damaging biological specimens. The STXM is constructed to minimize specimen dose, but it is important to measure the actual damage induced as a function of dose in order to determine the dose range within which radiation damage does not compromise image quality.

Characterization of defects in tabular silver halide grains

1990 ◽  
Vol 48 (4) ◽  
pp. 1046-1047
Author(s):  
C. Goessens ◽  
D. Schryvers ◽  
J. Van Landuyt ◽  
A. Verbeeck ◽  
R. De Keyzer
Keyword(s):  
Radiation Damage ◽  
Silver Halide ◽  
Chemical Characteristics ◽  
X Ray ◽  
Free Region ◽  
Central Defect ◽  
Crystallographic Defects ◽  
Physical And Chemical ◽  
Two Sides

Silver halide grains (AgX, X=Cl,Br,I) are commonly recognized as important entities in photographic applications. Depending on the preparation specifications one can grow cubic, octahedral, tabular a.o. morphologies, each with its own physical and chemical characteristics. In the present study crystallographic defects introduced by the mixing of 5-20% iodide in a growing AgBr tabular grain are investigated. X-ray diffractometry reveals the existence of a homogeneous Ag(Br1-xIx) region, expected to be formed around the AgBr kernel. In fig. 1 a two-beam BF image, taken at T≈100 K to diminish radiation damage, of a triangular tabular grain is presented, clearly showing defect contrast fringes along four of the six directions; the remaining two sides show similar contrast under relevant diffraction conditions. The width of the central defect free region corresponds with the pure AgBr kernel grown before the mixing with I. The thickness of a given grain lies between 0.15 and 0.3 μm: as indicated in fig. 2 triangular (resp. hexagonal) grains exhibit an uneven (resp. even) number of twin interfaces (i.e., between + and - twin variants) parallel with the (111) surfaces. The thickness of the grains and the existence of the twin variants was confirmed from CTEM images of perpendicular cuts.

Factors in Photographic Emulsions for Low Dose Electron Crystallography

1980 ◽  
Vol 38 ◽  
pp. 230-231
Author(s):  
T.W. Jeng ◽  
W. Chiu
Keyword(s):  
Radiation Damage ◽  
Low Dose ◽  
Damage Effect ◽  
Photographic Emulsion ◽  
Electron Crystallography ◽  
Electron Microscopic ◽  
X Ray ◽  
Signal Contrast ◽  
Diffraction Patterns ◽  
Photographic Emulsions

With the advances in preparing biological materials in a thin and highly ordered form, and in maintaining them hydrated under vacuum, electron crystallography has become an important tool for biological structure investigation at high resolution (1,2). However, the electron radiation damage would limit the capability of recording reflections with low intensities in an electron diffraction pattern. It has been demonstrated that the use of a low temperature stage can reduce the radiation damage effect and that one can expose the specimen with a higher dose in order to increase the signal contrast (3). A further improvement can be made by selecting a proper photographic emulsion. The primary factors in evaluating the suitability of photographic emulsion for recording low dose diffraction patterns are speed, fog level, electron response at low electron exposure, linearity, and usable range of exposure. We have compared these factors with three photographic emulsions including Kodak electron microscopic plate (EMP), Industrex AA x-ray film (AA x-ray) and Kodak nuclear track film (NTB3).

scholarly journals Suppression of X-ray-Induced Radiation Damage to Biomolecules in Aqueous Environments by Immediate Intermolecular Decay of Inner-Shell Vacancies

2021 ◽  
pp. 7146-7150
Author(s):  
Andreas Hans ◽  
Philipp Schmidt ◽  
Catmarna Küstner-Wetekam ◽  
Florian Trinter ◽  
Sascha Deinert ◽  
...  
Keyword(s):  
Radiation Damage ◽  
X Ray ◽  
Aqueous Environments

scholarly journals In situ monitoring of the influence of water on DNA radiation damage by near-ambient pressure X-ray photoelectron spectroscopy

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Marc Benjamin Hahn ◽  
Paul M. Dietrich ◽  
Jörg Radnik
Keyword(s):  
Dna Damage ◽  
Radiation Damage ◽  
Photoelectron Spectroscopy ◽  
Ambient Pressure ◽  
In Situ Monitoring ◽  
Strong Increase ◽  
Oh Radicals ◽  
Strand Breaks ◽  
X Ray

AbstractIonizing radiation damage to DNA plays a fundamental role in cancer therapy. X-ray photoelectron-spectroscopy (XPS) allows simultaneous irradiation and damage monitoring. Although water radiolysis is essential for radiation damage, all previous XPS studies were performed in vacuum. Here we present near-ambient-pressure XPS experiments to directly measure DNA damage under water atmosphere. They permit in-situ monitoring of the effects of radicals on fully hydrated double-stranded DNA. The results allow us to distinguish direct damage, by photons and secondary low-energy electrons (LEE), from damage by hydroxyl radicals or hydration induced modifications of damage pathways. The exposure of dry DNA to x-rays leads to strand-breaks at the sugar-phosphate backbone, while deoxyribose and nucleobases are less affected. In contrast, a strong increase of DNA damage is observed in water, where OH-radicals are produced. In consequence, base damage and base release become predominant, even though the number of strand-breaks increases further.

scholarly journals Soft X-ray radiation damage in argon clusters

2009 ◽  
Vol 194 (2) ◽  
pp. 022107
Author(s):  
M Gisselbrecht ◽  
M Tchaplyguine ◽  
F Burmeister ◽  
S Svensson ◽  
O Björneholm ◽  
...  
Keyword(s):  
Radiation Damage ◽  
X Ray ◽  
Argon Clusters

Radiation damage of the x-ray CCD

1996 ◽  
Author(s):  
Hiroshi Tomida ◽  
Hironori Matsumoto ◽  
Masanobu Ozaki ◽  
Yuji Tazawa ◽  
Hisamitsu Awaki ◽  
...  
Keyword(s):  
Radiation Damage ◽  
X Ray
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