Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

1996 ◽  
Vol 25 (8) ◽  
pp. 1215-1220 ◽  
Author(s):  
J. S. Kim ◽  
D. G. Seiler ◽  
R. A. Lancaster ◽  
M. B. Reine
Keyword(s):  
Magnetic Field ◽  
Single Crystals ◽  
Electrical Characterization ◽  
Variable Magnetic Field ◽  
Narrow Gap ◽  
Hall Measurements

Characterization of multiple carriers in GaN using variable magnetic-field hall measurements

2004 ◽  
Vol 33 (5) ◽  
pp. 412-417 ◽  
Author(s):  
C. H. Swartz ◽  
R. P. Tompkins ◽  
T. H. Myers ◽  
D. C. Look ◽  
J. R. Sizelove
Keyword(s):  
Magnetic Field ◽  
Variable Magnetic Field ◽  
Hall Measurements

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Electrical Characterization of In2Se3 Single Crystals

1991 ◽  
Vol 126 (2) ◽  
pp. 437-442 ◽  
Author(s):  
G. Micocci ◽  
A. Tepore ◽  
R. Rella ◽  
P. Siciliano
Keyword(s):  
Single Crystals ◽  
Electrical Characterization

CVT Growth, Microhardness, and Electrical Characterization of ZnGa2S4 Single Crystals

1987 ◽  
Vol 104 (2) ◽  
pp. K93-K96 ◽  
Author(s):  
B. Vengatesan ◽  
N. Kanniah ◽  
P. Ramasamy
Keyword(s):  
Single Crystals ◽  
Electrical Characterization

Nonlinear Current-Voltage Characteristics of Homojunctions Made by Zinc Oxide Single Crystals

1996 ◽  
Vol 458 ◽  
Author(s):  
Takeshi Harada ◽  
Yoshinobu Nakamura ◽  
Akira Kishimoto ◽  
Naobumi Motohira ◽  
Hiroaki Yanagida
Keyword(s):  
Zinc Oxide ◽  
Single Crystals ◽  
Electrical Characterization ◽  
Earth Metal ◽  
Chemical Vapor ◽  
Current Voltage ◽  
Zno Varistors ◽  
Zno Crystal ◽  
Single Boundary

ABSTRACTZinc oxide (ZnO) single crystals are grown by the traditional chemical vapor reaction method and ZnO crystal pairs with a single boundary are successfully obtained. The obtained specimens with one ZnO–ZnO boundary (ZnO homojunction) show nonlinear current-voltage (I–V) characteristics without the addition of Bi2O3, CoO, MnO2, and/or rare earth metal oxides. A specimen with higher breakdown voltage shows superior nonlinearity with negative resistivity in its I–V characteristics. Electrical characterization of the ZnO homojunction is conducted and extremely slow response with the current (or voltage) stress is confirmed. The phenomenon had never been observed in commercial ZnO varistors. The surface temperature of the ZnO homojunction is enhanced by larger applied current. The effect of the Joule heat on the nonlinearity in the I–V curves of the ZnO homojunction is discussed.

Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies

2010 ◽  
Vol 207 (11) ◽  
pp. 2426-2431 ◽  
Author(s):  
Wolfgang Anwand ◽  
Gerhard Brauer ◽  
Thomas E. Cowan ◽  
Viton Heera ◽  
Heidemarie Schmidt ◽  
...  
Keyword(s):  
Single Crystals ◽  
Structural Characterization ◽  
Hall Measurements ◽  
Doped Zno ◽  
Photoluminescence Studies

scholarly journals Development of an undulator with a variable magnetic field profile

2021 ◽  
Vol 28 (2) ◽  
pp. 404-409
Author(s):  
Takashi Tanaka ◽  
Yuichiro Kida ◽  
Ryota Kinjo ◽  
Tadashi Togashi ◽  
Hiromitsu Tomizawa ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Force ◽  
Mechanical Load ◽  
Magnetic Measurement ◽  
Variable Magnetic Field ◽  
Linear Actuator ◽  
Free Electron Lasers ◽  
Magnetic Field Profile ◽  
New Concepts

An undulator generating a magnetic field whose longitudinal profile is arbitrarily varied has been developed, which is one of the key components in a number of proposed new concepts in free-electron lasers. The undulator is composed of magnet modules, each of which corresponds to a single undulator period, and is driven by a linear actuator to change the magnetic gap independently. To relax the requirement on the actuator, the mechanical load on each module due to magnetic force acting from opponent and adjacent modules is reduced by means of two kinds of spring systems. The performance of the constructed undulator has been successfully demonstrated by magnetic measurement and characterization of synchrotron radiation.

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