Dislocation and stacking fault interactions in silicon

1987 ◽  
Vol 16 (2) ◽  
pp. 119-122 ◽  
Author(s):  
Douglas R. Sparks
Keyword(s):  
Stacking Fault ◽  
Fault Interactions

Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study

2003 ◽  
Vol 433-436 ◽  
pp. 921-924 ◽  
Author(s):  
Hisaomi Iwata ◽  
Ulf Lindefelt ◽  
Sven Öberg ◽  
Patrick R. Briddon
Keyword(s):  
Ab Initio ◽  
Stacking Fault ◽  
Ab Initio Study ◽  
Fault Interactions

Ab initio study of 3C inclusions and stacking fault–stacking fault interactions in 6H-SiC

2003 ◽  
Vol 94 (8) ◽  
pp. 4972 ◽  
Author(s):  
H. P. Iwata ◽  
U. Lindefelt ◽  
S. Öberg ◽  
P. R. Briddon
Keyword(s):  
Ab Initio ◽  
Stacking Fault ◽  
Ab Initio Study ◽  
Fault Interactions

UHREM investigation of stacking fault interactions in the CVD diamond structure

1999 ◽  
Vol 8 (2-5) ◽  
pp. 682-687 ◽  
Author(s):  
S Delclos ◽  
D Dorignac ◽  
F Phillipp ◽  
S Moulin ◽  
A.M Bonnot
Keyword(s):  
Cvd Diamond ◽  
Stacking Fault ◽  
Diamond Structure ◽  
Fault Interactions

scholarly journals Validation of the Concurrent Atomistic-Continuum Method on Screw Dislocation/Stacking Fault Interactions

Crystals ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 120 ◽  
Author(s):  
Shuozhi Xu ◽  
Liming Xiong ◽  
Youping Chen ◽  
David McDowell
Keyword(s):  
Screw Dislocation ◽  
Stacking Fault ◽  
Fault Interactions

Measurement of the Displacement Across a Coincidence Grain Boundary

1977 ◽  
Vol 35 ◽  
pp. 124-125
Author(s):  
J. W. Matthews ◽  
W. M. Stobbs
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Stacking Fault ◽  
The Other ◽  
Measuring Technique ◽  
High Angle ◽  
Twin Boundaries ◽  
Rigid Displacement ◽  
Cubic Crystals ◽  
Lattice Displacement

Many high-angle grain boundaries in cubic crystals are thought to be either coincidence boundaries (1) or coincidence boundaries to which grain boundary dislocations have been added (1,2). Calculations of the arrangement of atoms inside coincidence boundaries suggest that the coincidence lattice will usually not be continuous across a coincidence boundary (3). There will usually be a rigid displacement of the lattice on one side of the boundary relative to that on the other. This displacement gives rise to a stacking fault in the coincidence lattice.Recently, Pond (4) and Smith (5) have measured the lattice displacement at coincidence boundaries in aluminum. We have developed (6) an alternative to the measuring technique used by them, and have used it to find two of the three components of the displacement at {112} lateral twin boundaries in gold. This paper describes our method and presents a brief account of the results we have obtained.

On effects of non-systematic reflections on weak-beam images of partial dislocations

1991 ◽  
Vol 49 ◽  
pp. 688-689
Author(s):  
K. Z. Botros ◽  
S. S. Sheinin
Keyword(s):  
High Precision ◽  
Stacking Fault ◽  
Important Application ◽  
Stacking Fault Energy ◽  
Sharp Peak ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Deviation Parameter ◽  
Beam Diffraction

The main features of weak beam images of dislocations were first described by Cockayne et al. using calculations of intensity profiles based on the kinematical and two beam dynamical theories. The feature of weak beam images which is of particular interest in this investigation is that intensity profiles exhibit a sharp peak located at a position very close to the position of the dislocation in the crystal. This property of weak beam images of dislocations has an important application in the determination of stacking fault energy of crystals. This can easily be done since the separation of the partial dislocations bounding a stacking fault ribbon can be measured with high precision, assuming of course that the weak beam relationship between the positions of the image and the dislocation is valid. In order to carry out measurements such as these in practice the specimen must be tilted to "good" weak beam diffraction conditions, which implies utilizing high values of the deviation parameter Sg.

Friedel'S law breakdown and interpretation of stacking fault images in tetrahedral semiconductors

1987 ◽  
Vol 45 ◽  
pp. 318-319
Author(s):  
Rob. W. Glaisher ◽  
A.E.C. Spargo
Keyword(s):  
Relative Phase ◽  
Point Group ◽  
Binary Compound ◽  
Stacking Fault ◽  
Fold Axis ◽  
Atom Pair ◽  
Tetrahedral Semiconductors ◽  
Group Symmetries ◽  
Thin Crystal ◽  
Phase Differences

Images of <11> oriented crystals with diamond structure (i.e. C,Si,Ge) are dominated by white spot contrast which, depending on thickness and defocus, can correspond to either atom-pair columns or tunnel sites. Olsen and Spence have demonstrated a method for identifying the correspondence which involves the assumed structure of a stacking fault and the preservation of point-group symmetries by correctly aligned and stigmated images. For an intrinsic stacking fault, a two-fold axis lies on a row of atoms (not tunnels) and the contrast (black/white) of the atoms is that of the {111} fringe containing the two-fold axis. The breakdown of Friedel's law renders this technique unsuitable for the related, but non-centrosymmetric binary compound sphalerite materials (e.g. GaAs, InP, CdTe). Under dynamical scattering conditions, Bijvoet related reflections (e.g. (111)/(111)) rapidly acquire relative phase differences deviating markedly from thin-crystal (kinematic) values, which alter the apparent location of the symmetry elements needed to identify the defect.

Contrast From Point Defects in The Infinitesimal Approximation

1980 ◽  
Vol 38 ◽  
pp. 350-351
Author(s):  
L. J. Sykes ◽  
J. J. Hren
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Broad Class ◽  
Stacking Fault ◽  
Crystalline Solids ◽  
Dislocation Loops ◽  
Analytical Expression ◽  
Stacking Fault Tetrahedra

In electron microscope studies of crystalline solids there is a broad class of very small objects which are imaged primarily by strain contrast. Typical examples include: dislocation loops, precipitates, stacking fault tetrahedra and voids. Such objects are very difficult to identify and measure because of the sensitivity of their image to a host of variables and a similarity in their images. A number of attempts have been made to publish contrast rules to help the microscopist sort out certain subclasses of such defects. For example, Ashby and Brown (1963) described semi-quantitative rules to understand small precipitates. Eyre et al. (1979) published a catalog of images for BCC dislocation loops. Katerbau (1976) described an analytical expression to help understand contrast from small defects. There are other publications as well.

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