The role of surface adsorbates in the metalorganic vapor phase epitaxial growth of (Hg,Cd)Te onto (100) GaAs Substrates

1995 ◽  
Vol 24 (9) ◽  
pp. 1149-1153 ◽  
Author(s):  
J. Giess ◽  
J. E. Hails ◽  
A. Graham ◽  
G. Blackmore ◽  
M. R. Houlton ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrates ◽  
Surface Adsorbates

The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substrates

1994 ◽  
Vol 139 (3-4) ◽  
pp. 231-237 ◽  
Author(s):  
Moo-Sung Kim ◽  
Yong Kim ◽  
Min-Suk Lee ◽  
Young Ju Park ◽  
Seong-Il Kim ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Miller Index ◽  
Gaas Substrates

Organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells on 10°‐off GaAs substrates using ethyldimethylindium

1992 ◽  
Vol 60 (8) ◽  
pp. 1007-1009 ◽  
Author(s):  
T. Y. Wang ◽  
D. F. Welch ◽  
D. R. Scifres ◽  
D. W. Treat ◽  
R. D. Bringans ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrates

Vapor Phase Epitaxial Growth of ZnSiAs2 on Ge and GaAs Substrates

1981 ◽  
Vol 128 (7) ◽  
pp. 1563-1568 ◽  
Author(s):  
J. E. Andrews ◽  
H. H. Stadelmaier ◽  
M. A. Littlejohn ◽  
J. Comas
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrates

Iodine‐doping effects on the vapor‐phase epitaxial growth of ZnSe on GaAs substrates

1990 ◽  
Vol 67 (1) ◽  
pp. 247-250 ◽  
Author(s):  
Shunro Fuke ◽  
Tetsuji Imai ◽  
Shin‐ichi Irisawa ◽  
Kazuhiro Kuwahara
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Iodine Doping ◽  
Gaas Substrates ◽  
Doping Effects

The role of surface adsorbates on electrical properties of MOVPE grown HgCdTe onto (001) GaAs substrates

2004 ◽  
Vol 48 (9) ◽  
pp. 1623-1627 ◽  
Author(s):  
Jin-Sang Kim ◽  
Young-Hwan Kim ◽  
Byung-Kook Kim ◽  
Hae-June Je
Keyword(s):  
Electrical Properties ◽  
Gaas Substrates ◽  
Surface Adsorbates

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

2003 ◽  
Vol 32 (7) ◽  
pp. 656-660 ◽  
Author(s):  
C. D. Maxey ◽  
J. P. Camplin ◽  
I. T. Guilfoy ◽  
J. Gardner ◽  
R. A. Lockett ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Organic Vapor ◽  
Metal Organic

Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

1999 ◽  
Vol 564 ◽  
Author(s):  
S. Ohmi ◽  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Diffusion Barrier ◽  
Blocking Layer ◽  
Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

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