Effects of dissolved mineral species on the surface chemical characteristic, electrokinetic property and flotation behavior of fluorite and scheelite

Yuehua Hu; Jin Xu; Guangzhou Qiu; Dianzuo Wang

doi:10.1007/bf02652087

Effects of dissolved mineral species on the surface chemical characteristic, electrokinetic property and flotation behavior of fluorite and scheelite

Journal of Central South University of Technology ◽

10.1007/bf02652087 ◽

1994 ◽

Vol 1 (1) ◽

pp. 63-67 ◽

Cited By ~ 2

Author(s):

Yuehua Hu ◽

Jin Xu ◽

Guangzhou Qiu ◽

Dianzuo Wang

Keyword(s):

Chemical Characteristic ◽

Mineral Species ◽

Surface Chemical ◽

Electrokinetic Property ◽

Flotation Behavior

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Analytical Electron Microscopy of Ion-Implanted Metals

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010011831x ◽

1985 ◽

Vol 43 ◽

pp. 282-285

Author(s):

D.I. Potter ◽

M. Ahmed ◽

K. Ruffing

Keyword(s):

Electron Microscopy ◽

Ion Implantation ◽

Friction And Wear ◽

Analytical Electron Microscopy ◽

Chemical Compositions ◽

Surface Chemical ◽

Near Surface ◽

The Past ◽

Analytical Electron ◽

Property Changes

Ion implantation, used extensively for the past decade in fabricating semiconductor devices, now provides a unique means for altering the near-surface chemical compositions and microstructures of metals. These alterations often significantly improve physical properties that depend on the surface of the material; for example, catalysis, corrosion, oxidation, hardness, friction and wear. Frequently the mechanisms causing these beneficial alterations and property changes remain obscure and much of the current research in the area of ion implantation metallurgy is aimed at identifying such mechanisms. Investigators thus confront two immediate questions: To what extent is the chemical composition changed by implantation? What is the resulting microstructure? These two questions can be investigated very fruitfully with analytical electron microscopy (AEM), as described below.

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Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

MRS Proceedings ◽

10.1557/proc-223-389 ◽

1991 ◽

Vol 223 ◽

Author(s):

Neeta Agrawal ◽

R. D. Tarey ◽

K. L. Chopra

Keyword(s):

Etch Rate ◽

Argon Plasma ◽

Surface Modifications ◽

Surface Chemical ◽

Plasma Exposure ◽

X Ray ◽

Aluminium Fluoride ◽

A New Technique ◽

Plasma Exposure Time ◽

Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

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