Electron paramagnetic resonance and optically-detected magnetic resonance of donors in AlxGa1-xAs

1991 ◽  
Vol 20 (1) ◽  
pp. 49-54 ◽  
Author(s):  
T. A. Kennedy ◽  
E. Glaser
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Resonance ◽  
Paramagnetic Resonance ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Electron Paramagnetic

Optically Detected Magnetic Resonance of Arsenic Antisites in GaAs MBE Layers Grown at Low Temperatures

1991 ◽  
Vol 241 ◽  
Author(s):  
F. C. Rong ◽  
L. Fotiadis ◽  
H.-J. Sun ◽  
G. D. Watkins ◽  
M. A. Taysing-Lara ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Magnetic Circular Dichroism ◽  
Paramagnetic Resonance ◽  
Optically Detected Magnetic Resonance ◽  
Order Of Magnitude ◽  
Optically Detected ◽  
Electron Paramagnetic ◽  
Substrate Temperatures

ABSTRACTObservation of Arsenic antisites (AsGa) in GaAs layers grown by molecular beam epitaxy (MBE) at low substrate temperatures (∼ 200°C) is reported, using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA tagged by optically detected magnetic resonance (MCDA-ODMR). This experiment confirms that there is a MCD absorption band directly associated with AsGa in the GaAs layers. The AsGa concentration in the GaAs layers is found to decrease by about one order of magnitude after annealing at 600°C for two minutes.

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