Growth and characterization of Ga2Te3 films by metalorganic molecular beam epitaxy

1991 ◽  
Vol 20 (3) ◽  
pp. 247-250 ◽  
Author(s):  
N. Teraguchi ◽  
F. Kato ◽  
M. Konagai ◽  
K. Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Growth and characterization of HgCdTe heterostructures by metalorganic molecular beam epitaxy

1996 ◽  
Vol 159 (1-4) ◽  
pp. 1152-1156 ◽  
Author(s):  
A. Parikh ◽  
S.D. Pearson ◽  
T.K. Tran ◽  
R.N. Bicknell ◽  
R.G. Benz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Structural Characterization of GaN Grown By Electron Cyclotron Resonance-Metalorganic Molecular Beam Epitaxy (ECR-MOMBE)

1994 ◽  
Vol 339 ◽  
Author(s):  
S. Bharatan ◽  
K. S. Jones ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
F. Ren
Keyword(s):  
Electron Microscopy ◽  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTElectron cyclotron resonance-metalorganic molecular beam epitaxy (ECR-MOMBE) has been used to deposit cubic and hexagonal gallium nitride (GaN) on various substrates, namely GaAs, ZnO and Al2O3. This paper will report on the effect of the growth rate of the GaN layer on the surface morphology, as analyzed using scanning electron microscopy (SEM). Structural characterization of this material was conducted using cross-sectional transmission electron microscopy (XTEM) and x-ray diffraction. Conditions such as pre-deposition annealing, growth rate and growth temperature are critical in determining the phase and crystallinity of the deposited layers. These parameters were optimized to obtain the cubic GaN phase on GaAs substrates and single crystal wurtzitic GaN on ZnO and Al2O3 substrates.

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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