Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers

1990 ◽  
Vol 19 (6) ◽  
pp. 509-513 ◽  
Author(s):  
J. M. Ballingall ◽  
Pin Ho ◽  
P. A. Martin ◽  
G. J. Tessmer ◽  
T. H. Yu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Electron Mobility ◽  
Active Layers

VA-5 pseudomorphic GaInAs/GaAs single quantum well high electron mobility transistor

1985 ◽  
Vol 32 (11) ◽  
pp. 2546-2546 ◽  
Author(s):  
J.J. Rosenberg ◽  
M. Benlamri ◽  
P.D. Kirchner ◽  
J.M. Woodall ◽  
G.D. Pettit
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Electron Mobility

scholarly journals A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor; part I: The Boltzmann-Poisson-Schrödinger solver

1996 ◽  
Vol 2 (3) ◽  
pp. 205-218 ◽  
Author(s):  
R. Khoie
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Boltzmann Transport ◽  
Single Quantum Well ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Self Consistent ◽  
Unity Gain

A self-consistent Boltzmann-Poisson-Schrödinger solver for High Electron Mobility Transistor is presented. The quantization of electrons in the quantum well normal to the heterojunction is taken into account by solving the two higher moments of Boltzmann equation along with the Schrödinger and Poisson equations, self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy balance equation are solved to obtain the transient and steady-state transport behavior. The numerical instability problems associated with the simulator are presented, and the criteria for smooth convergence of the solutions are discussed. The current-voltage characteristics, transconductance, gate capacitance, and unity-gain frequency of a single quantum well HEMT is discussed. It has been found that a HEMT device with a gate length of 0.7μm, and with a gate bias voltage of 0.625 V, has a transconductance of 579.2 mS/mm, which together with the gate capacitance of 19.28 pF/cm, can operate at a maximum unity-gain frequency of 47.8 GHz.

Pseudomorphic GaInAs/GaAs single quantum well structures with high electron mobility

1986 ◽  
Vol 174 (1-3) ◽  
pp. 399-400 ◽  
Author(s):  
J.M. Woodall ◽  
P.D. Kirchner ◽  
G.D. Pettit ◽  
J.J. Rosenberg
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
High Electron ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Electron Mobility ◽  
Quantum Well Structures

Novel pseudomorphic high electron mobility transistor structures with GaAs‐In0.3Ga0.7As thin strained superlattice active layers

1989 ◽  
Vol 54 (21) ◽  
pp. 2121-2123 ◽  
Author(s):  
J. M. Ballingall ◽  
P. Ho ◽  
G. J. Tessmer ◽  
P. A. Martin ◽  
Nathan Lewis ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Active Layers
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