Effect of barrier layers on BaTiO3 thin film capacitors on Si substrates

1994 ◽  
Vol 23 (1) ◽  
pp. 53-56 ◽  
Author(s):  
Q. X. Jia ◽  
Z. Q. Shi ◽  
J. Yi ◽  
W. A. Anderson
Keyword(s):  
Thin Film ◽  
Barrier Layers ◽  
Si Substrates ◽  
Thin Film Capacitors ◽  
Batio3 Thin Film

Interface Structure and Dielectric Properties of SrTiO3 Thin Film Sputter-Deposited onto Si Substrates

1990 ◽  
Vol 200 ◽  
Author(s):  
S. Matsubara ◽  
T. Sakuma ◽  
S. Yamamichi ◽  
H. Yamaguchi ◽  
Y. Miyasaka
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Film Thickness ◽  
Noble Metals ◽  
Film Surface ◽  
Cross Sectional ◽  
Capacitance Density ◽  
Barrier Layers ◽  
Si Substrates

ABSTRACTSrTiO3 thin film preparation onto Si substrates using RF magnetron sputtering has been studied for a high capacitance density required for the next generation of LSI's. Structural and chemical analysis on the interface between SrTiO3 film and Si was carried out with cross-sectional TEM, EDX, and AES. Dielectric properties were measured on AuTi/SrTiO3/Si/Ti/Au capacitors. The as-grown dielectric films on Si were analyzed and found to consist of three layers; SiO2, amorphous SrTiO3 and crystalline SrTiO3, from interface toward film surface. By annealing at 600 °C, the amorphous SrTiO3 layer was recrystallized, and consequently the capacitance value increased. A typical specific capacitance was 4.7 fF/μm2 and the leakage current was in the order of 10−8 A/cm2, for 180 nm thick SrTiO3 film. The dielectric constant decreased from 147 to 56 with decreasing SrTiO3 film thickness from 480 nm to 80 nm. This is due to the low dielectric constant SiO2 layer (ε=3.9) at the interface. From the film thickness dependence of the ε value, the SiO2 layer thickness was calculated to be 3.9 nm, which agreed well with the value directly observed in the TEM.To avoid SiO2 layer formation, barrier layers between SrTiO3 and Si have been studied. Among various refractory and noble metals, RuSi and a multi-layer of Pt/Ti have been found to be promising candidates for the barrier material. When RuSi film or Pt/Ti film was formed between SrTiO3 film and Si substrate, dielectric constant of about 190 was obtained in dependent of the SrTiO3 film thickness in the range of 80–250 nm. Analysis on the barrier layers was performed by means of RBS, XPS and XRD.

Effect of La Dopant on Electrical Properties of Pb(Zr,Ti)O3 Thin Film Capacitors

1999 ◽  
Vol 596 ◽  
Author(s):  
Chang Jung Kim ◽  
Ilsub Chung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Random Access ◽  
Lead Zirconate ◽  
Second Phase ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Thin Film Capacitors

AbstractLanthanum doped lead zirconate titanate (PZT) thin films have been prepared on Pt/IrO2/Ir/SiO2/Si substrates to improve the ferroelectric and retention properties. The microstructure and electrical properties of the PZT capacitors were evaluated as a function of La content. The crystalline orientation was appreciably influenced by the addition of La in PZT thin films. The microstructures of films containing 0 and 0.5 mol% La were single phase perovskite, but for La = 1 mol%, a second phase was detected by SEM observation. The 0.5 mol% La doped PZT thin film capacitor showed the best ferroelectric and retention properties for ferroelectric random access memory compared to non-doped PZT.

Low-frequency dielectric relaxation of BaTiO3 thin-film capacitors

1999 ◽  
Vol 75 (12) ◽  
pp. 1784-1786 ◽  
Author(s):  
Su-Jae Lee ◽  
Kwang-Yong Kang ◽  
Seok-Kil Han
Keyword(s):  
Thin Film ◽  
Dielectric Relaxation ◽  
Low Frequency ◽  
Thin Film Capacitors ◽  
Batio3 Thin Film

Control of misfit strain in ferroelectric BaTiO3 thin-film capacitors with SrRuO3-based electrodes on (Ba, Sr)TiO3-buffered SrTiO3 substrates

2018 ◽  
Vol 113 (1) ◽  
pp. 012903 ◽  
Author(s):  
Yuji Noguchi ◽  
Hisashi Maki ◽  
Yuuki Kitanaka ◽  
Hiroki Matsuo ◽  
Masaru Miyayama
Keyword(s):  
Thin Film ◽  
Misfit Strain ◽  
Thin Film Capacitors ◽  
Batio3 Thin Film

BaTiO3 thin film capacitors deposited by r.f. magnetron sputtering

1992 ◽  
Vol 209 (2) ◽  
pp. 230-239 ◽  
Author(s):  
Q.X. Jia ◽  
Z.Q. Shi ◽  
W.A. Anderson
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Capacitors ◽  
Batio3 Thin Film
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