An investigation of wet-and dry-bulb psychrometry in metallic vapor-gas systems

1973 ◽  
Vol 4 (3) ◽  
pp. 695-699
Author(s):  
D. L. Regozo ◽  
N. Standish ◽  
N. A. Warner
Keyword(s):  
Metallic Vapor

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

scholarly journals Periodic unmixing of a binary metallic vapor

2005 ◽  
Vol 72 (15) ◽  
Author(s):  
J. Maul ◽  
I. Strachnov ◽  
S. Karpuk ◽  
T. Schilling ◽  
A. Oelsner ◽  
...  
Keyword(s):  
Metallic Vapor

Mesoscopic Model for the Condensation of a Metallic Vapor

2019 ◽  
Vol 2019 (2) ◽  
pp. 127-130
Author(s):  
A. E. Korenchenko ◽  
A. G. Vorontsov ◽  
B. P. Gel’chinskii
Keyword(s):  
Mesoscopic Model ◽  
Metallic Vapor

Diffusion of Metallic Vapor in Condensed Spark Discharges

1931 ◽  
Vol 37 (2) ◽  
pp. 217-218 ◽  
Author(s):  
Harvey A. Zinszer
Keyword(s):  
Spark Discharges ◽  
Metallic Vapor

Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 1, No. 2) ◽  
pp. 445-449 ◽  
Author(s):  
Takashi Oobo ◽  
Riichiro Takemura ◽  
Ken Sato ◽  
Michihiko Suhara ◽  
Yasuyuki Miyamoto ◽  
...  
Keyword(s):  
Energy Level ◽  
Layer Thickness ◽  
Vapor Phase ◽  
Resonant Tunneling ◽  
Vapor Phase Epitaxy ◽  
Tunneling Diodes ◽  
Level Width ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
Metallic Vapor

Sensitized fluorescence in thallium induced in collisions with Hg(63P1) atoms

1978 ◽  
Vol 56 (7) ◽  
pp. 891-896 ◽  
Author(s):  
M. K. Wade ◽  
M. Czajkowski ◽  
L. Krause
Keyword(s):  
Cross Sections ◽  
Ground State ◽  
Excitation Transfer ◽  
Resonance Radiation ◽  
Resonance Fluorescence ◽  
Collisional Excitation ◽  
Vapor Mixture ◽  
Sensitized Fluorescence ◽  
Intensity Measurements ◽  
Metallic Vapor

The transfer of excitation from excited mercury atoms to ground-state thallium atoms was investigated using techniques of sensitized fluorescence. A Hg–Tl vapor mixture contained in a quartz cell was irradiated with Hg 2537 Å resonance radiation which caused the mercury atoms to become excited to the 63P1, state. Subsequent collisions between the Hg(63P1) and Tl(62P1/2) atoms resulted in the population of the 82S1/2, 62D, and 72S1/2 thallium states, whose decay gave rise to sensitized fluorescence of wavelengths 3231, 3520, 3776, and 5352 Å. Intensity measurements on the sensitized fluorescence and on the Hg 2537 Å resonance fluorescence, observed at right angles to the direction of excitation, yielded cross sections of 3.0, 0.3, and 0.05 Å2 for collisional excitation transfer from Hg(63P1) to the 82S1/2, 62D, and 72S1/2 states in thallium, respectively. The results are fully consistent with previously determined cross sections for excitation transfer in other binary metallic vapor systems.

Spectroscopic Analysis of Plasma Induced in Laser Welding of Aluminum Alloys

2004 ◽  
Vol 449-452 ◽  
pp. 429-432 ◽  
Author(s):  
J.D. Kim ◽  
Jin Seok Oh ◽  
Myung Hyun Lee ◽  
Y.S. Kim
Keyword(s):  
Laser Welding ◽  
Power Density ◽  
Irradiation Condition ◽  
Band Spectrum ◽  
Surface Oxide Layer ◽  
Molecular Spectra ◽  
Atomic Lines ◽  
Band Spectra ◽  
Al Mg Alloys ◽  
Metallic Vapor

This paper describes the features and characteristics of plasma induced in the pulsed YAG laser welding of Al-Mg alloys in air and argon atmospheres. In the air environment, the identified spectra are atomic lines of Al, Mg, Cr, Mn, Fe and Zn, and singly ionized Mg line, as well as strong molecular spectrum of AlO, MgO and AlH. It has been confirmed that the resonant lines of Al and Mg were strongly self-absorbed. These facts have shown that the laser-induced plasma is relatively a low temperature and high density metallic vapor. The intensities of molecular spectra of AlO and MgO are different each other depending on the power density of laser beam. Under the low power density irradiation condition, the MgO band spectrum is predominant in intensity, while the AlO spectrum became much stronger with the increase in high power density. This was attributed by the great difference in boiling point and vaporization energy of Al and Mg. In argon atmosphere the band spectra of MgO and AlO completely vanished, but AlH molecular spectra is detected clearly. The hydrogen source is presumably the hydrogen solved in the base metal, absorbed water on the surface oxide layer, or H2 and H2O in the shielding gas.

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